Magnetic element utilizing free layer engineering
First Claim
1. A magnetic element comprising:
- a pinned layer;
a barrier layer composed of crystalline MgO;
a free layer including a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer, the barrier layer residing between the pinned layer and the free layer, the first ferromagnetic layer residing between the barrier layer and the intermediate layer, the first ferromagnetic layer being ferromagnetically coupled with the second ferromagnetic layer, the first ferromagnetic layer including at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent, the intermediate layer being configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer and wherein the first crystalline orientation is (002).
2 Assignments
0 Petitions
Accused Products
Abstract
A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.
-
Citations
4 Claims
-
1. A magnetic element comprising:
-
a pinned layer; a barrier layer composed of crystalline MgO; a free layer including a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer, the barrier layer residing between the pinned layer and the free layer, the first ferromagnetic layer residing between the barrier layer and the intermediate layer, the first ferromagnetic layer being ferromagnetically coupled with the second ferromagnetic layer, the first ferromagnetic layer including at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent, the intermediate layer being configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer and wherein the first crystalline orientation is (002).
-
-
2. A magnetic element comprising:
-
a pinned layer; a barrier layer including crystalline MgO; a free layer including a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer, the barrier layer residing between the pinned layer and the free layer, the first ferromagnetic layer residing between the barrier layer and the intermediate layer, the first ferromagnetic layer being ferromagnetically coupled with the second ferromagnetic layer, the first ferromagnetic layer including at least one of CoFeX and CoFeNiX with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent, the second ferromagnetic layer including at least one of the CoFeX and NiFe, the intermediate layer being configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer, the intermediate layer including Ru and having a thickness of at least one Angstrom and not more than five Angstroms, the first crystalline orientation being (002).
-
-
3. A magnetic recording head comprising:
a one magnetic element including a pinned layer, a barrier layer, and a free layer including a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer, the barrier layer residing between the pinned layer and the free layer, the barrier layer including MgO, the first ferromagnetic layer residing between the barrier layer and the intermediate layer, the first ferromagnetic layer being ferromagnetically coupled with the second ferromagnetic layer, the first ferromagnetic layer including at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent, the intermediate layer being configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer, the first crystalline orientation being (002).
-
4. A magnetic element comprising:
-
a pinned layer; a barrier layer including MgO; a free layer including a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer, the barrier layer residing between the pinned layer and the free layer, the first ferromagnetic layer residing between the barrier layer and the intermediate layer, the first ferromagnetic layer being ferromagnetically coupled with the second ferromagnetic layer, the first ferromagnetic layer including at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, and Ti, and being greater than zero atomic percent and not more than thirty atomic percent, the intermediate layer being configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer, the first crystalline orientation being (002).
-
Specification