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NROM non-volatile memory and mode of operation

  • US 7,760,554 B2
  • Filed: 08/02/2006
  • Issued: 07/20/2010
  • Est. Priority Date: 02/21/2006
  • Status: Active Grant
First Claim
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1. A method for operating a plurality of NVM memory cells comprising:

  • performing an erase step using Fowler-Nordheim tunneling (FNT) to establish a high initial threshold voltage (Vt) for the plurality of memory cells;

    performing a first programming step using hot hole injection (HHI) to reduce the threshold voltage (Vt) of selected ones of the memory cells; and

    performing a second programming step using channel hot electron (CHE) injection to increase the threshold voltage (Vt) of bits of memory cells that are unnecessarily programmed in the first programming step.

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