Method for forming isolation structure of different widths in semiconductor device
First Claim
1. A method for forming an isolation structure in a semiconductor device, wherein the semiconductor device includes a substrate comprising a first region and a second region, the second region having an isolation structure formed to a larger width than a plurality of isolation structures formed in the first region, the method comprising:
- etching portions of the first and second regions of the substrate to form first and second trenches, respectively, wherein a width of the second trench is larger than that of the first trench;
forming a first insulation layer to fill a portion of the first and second trenches;
directly after forming the first insulation layer, forming a barrier layer over the first insulation layer;
etching portions of the first insulation layer and the barrier layer;
removing the barrier layer; and
forming a second insulation layer over the first insulation layer to fill the first and second trenches,wherein the barrier layer is foamed to have a smaller thickness in the second region than in the first region,wherein etching portions of the first insulation layer and the barrier layer in the first region comprises;
forming a photoresist pattern over the barrier layer of the second trench; and
performing a first etch process to etch the portions of the first insulation layer and the barrier layer in the first region using the photoresist pattern.
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Abstract
A method for forming an isolation structure in a semiconductor device including a substrate having a first region and a second region, the second region having an isolation structure formed to a larger width than a plurality of isolation structures formed in the first region, is provided. The method includes etching portions of the first and second regions of the substrate to form first and second trenches, wherein a width of the second trench is larger than that of the first trench, forming a first insulation layer to fill a portion of the first and second trenches, forming a barrier layer to fill the first and second trenches, etching portions of the first insulation layer and the barrier layer in the first region, removing the barrier layer, and forming a second insulation layer over the first insulation layer.
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Citations
18 Claims
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1. A method for forming an isolation structure in a semiconductor device, wherein the semiconductor device includes a substrate comprising a first region and a second region, the second region having an isolation structure formed to a larger width than a plurality of isolation structures formed in the first region, the method comprising:
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etching portions of the first and second regions of the substrate to form first and second trenches, respectively, wherein a width of the second trench is larger than that of the first trench; forming a first insulation layer to fill a portion of the first and second trenches; directly after forming the first insulation layer, forming a barrier layer over the first insulation layer; etching portions of the first insulation layer and the barrier layer; removing the barrier layer; and forming a second insulation layer over the first insulation layer to fill the first and second trenches, wherein the barrier layer is foamed to have a smaller thickness in the second region than in the first region, wherein etching portions of the first insulation layer and the barrier layer in the first region comprises; forming a photoresist pattern over the barrier layer of the second trench; and performing a first etch process to etch the portions of the first insulation layer and the barrier layer in the first region using the photoresist pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification