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Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell

  • US 7,763,535 B2
  • Filed: 08/29/2008
  • Issued: 07/27/2010
  • Est. Priority Date: 08/30/2007
  • Status: Expired due to Fees
First Claim
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1. A method for producing a backside contact of a semiconductor element, comprising:

  • depositing a metallic layer on the backside of a substrate through sputtering or vapor deposition in an inline vacuum deposition system having deposition tools; and

    depositing at least one additional layer on at least one of a frontside or backside of the substrate in the inline vacuum deposition system, wherein the metallic layer and the additional layer are deposited without interrupting vacuum, wherein the at least one additional layer is a solderable layer comprising one or several layers of material chosen from the group consisting of Ag, Ni, NiV, NiCr, or Cr and is deposited on the backside after depositing the metallic layer.

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