Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell
First Claim
1. A method for producing a backside contact of a semiconductor element, comprising:
- depositing a metallic layer on the backside of a substrate through sputtering or vapor deposition in an inline vacuum deposition system having deposition tools; and
depositing at least one additional layer on at least one of a frontside or backside of the substrate in the inline vacuum deposition system, wherein the metallic layer and the additional layer are deposited without interrupting vacuum, wherein the at least one additional layer is a solderable layer comprising one or several layers of material chosen from the group consisting of Ag, Ni, NiV, NiCr, or Cr and is deposited on the backside after depositing the metallic layer.
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Abstract
The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.
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Citations
17 Claims
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1. A method for producing a backside contact of a semiconductor element, comprising:
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depositing a metallic layer on the backside of a substrate through sputtering or vapor deposition in an inline vacuum deposition system having deposition tools; and depositing at least one additional layer on at least one of a frontside or backside of the substrate in the inline vacuum deposition system, wherein the metallic layer and the additional layer are deposited without interrupting vacuum, wherein the at least one additional layer is a solderable layer comprising one or several layers of material chosen from the group consisting of Ag, Ni, NiV, NiCr, or Cr and is deposited on the backside after depositing the metallic layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification