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Semiconductor device and manufacturing method thereof

  • US 7,763,930 B2
  • Filed: 08/29/2007
  • Issued: 07/27/2010
  • Est. Priority Date: 08/29/2006
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:

  • forming a pair of adjacent gate structures on a substrate;

    forming mask patterns exposing a portion of the substrate located between the gate structures;

    etching the portion of the substrate located between the gate structures using the mask patterns as an etch mask to form a pocket;

    implanting first conduction type impurities into the pocket to form a first conduction type impurity layer in a surface of the pocket;

    implanting second conduction type impurities into the pocket to form a second conduction type impurity layer on the first conduction type impurity layer; and

    filling the pocket with an insulating material.

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