Methods of manufacturing an oxide semiconductor thin film transistor
First Claim
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1. A method of manufacturing an oxide semiconductor thin film transistor, the method comprising:
- forming a gate on a substrate;
forming a gate insulating layer on the substrate such that the gate insulating layer covers the gate;
forming a channel layer on the gate insulating layer, the channel layer being formed of an oxide semiconductor;
forming source and drain electrodes on opposing sides of the channel layer;
forming a passivation layer that covers the source and drain electrodes and the channel layer;
injecting a plurality of oxygen-containing ions into the channel layer after forming the passivation layer; and
annealing the oxide semiconductor thin film transistor after forming the passivation layer and injecting the oxygen-containing ions.
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Abstract
Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.
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9 Claims
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1. A method of manufacturing an oxide semiconductor thin film transistor, the method comprising:
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forming a gate on a substrate; forming a gate insulating layer on the substrate such that the gate insulating layer covers the gate; forming a channel layer on the gate insulating layer, the channel layer being formed of an oxide semiconductor; forming source and drain electrodes on opposing sides of the channel layer; forming a passivation layer that covers the source and drain electrodes and the channel layer; injecting a plurality of oxygen-containing ions into the channel layer after forming the passivation layer; and annealing the oxide semiconductor thin film transistor after forming the passivation layer and injecting the oxygen-containing ions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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