Printed dopant layers
First Claim
1. A method for making a MOS transistor, comprising the steps of:
- a) forming a plurality of semiconductor islands on an electrically functional substrate;
b) printing a first dielectric layer on or over a first subset of said semiconductor islands and a second dielectric layer on or over a second subset of said semiconductor islands, said first dielectric layer containing a first dopant and said second dielectric layer containing a second dopant different from said first dopant, such that said first and second dielectric layers are laterally adjacent to each other and do not overlap each other over the active region of said MOS transistor; and
c) annealing said dielectric layer(s), said semiconductor islands and said substrate sufficiently to diffuse said first dopant into said first subset of semiconductor islands and said second dopant into said second subset of semiconductor islands.
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Accused Products
Abstract
A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
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Citations
23 Claims
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1. A method for making a MOS transistor, comprising the steps of:
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a) forming a plurality of semiconductor islands on an electrically functional substrate; b) printing a first dielectric layer on or over a first subset of said semiconductor islands and a second dielectric layer on or over a second subset of said semiconductor islands, said first dielectric layer containing a first dopant and said second dielectric layer containing a second dopant different from said first dopant, such that said first and second dielectric layers are laterally adjacent to each other and do not overlap each other over the active region of said MOS transistor; and c) annealing said dielectric layer(s), said semiconductor islands and said substrate sufficiently to diffuse said first dopant into said first subset of semiconductor islands and said second dopant into said second subset of semiconductor islands. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for making a MOS transistor, comprising the steps of:
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a) forming a plurality of transistor gates on or over a substrate; b) printing a first dielectric layer on or over a first subset of said transistor gates and a second dielectric layer on or over a second subset of said transistor gates, said first dielectric layer containing a first dopant and said second dielectric layer containing a second dopant different from said first dopant, such that said first and second dielectric layers are laterally adjacent to each other and do not overlap each other over the active region of said MOS transistor; c) forming contact holes in each of said first and second dielectric layers, exposing an upper surface of each transistor gate; and d) etching the first and second dielectric layers sufficiently to widen said contact holes. - View Dependent Claims (19, 20, 21, 22, 23)
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Specification