Method for producing a vertical transistor component
First Claim
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1. A method for producing a vertical transistor component, comprising:
- a) providing a semiconductor substrate,b) providing an auxiliary layer on the semiconductor substrate,c) patterning the auxiliary layer such that at least a first trench is produced that extends as far as a surface of the semiconductor substrate, the first trench having opposite sidewalls,d) producing a monocrystalline semiconductor layer on at least one of the sidewalls of the first trench, ande) producing an electrode insulated from the monocrystalline semiconductor layer and the semiconductor substrate,f) removing the auxiliary layer, thereby forming a second trench that extends to the substrate;
g) introducing dopants of a conduction type that is complementary to the conduction type of the semiconductor substrate in the semiconductor substrate at the bottom of the second trench, thereby forming a further semiconductor zone that forms a pn-junction with the semiconductor substrate;
h) forming an electrode in the second trench that contacts the further semiconductor zone.
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Abstract
A method for producing a vertical transistor component includes steps of providing a semiconductor substrate, applying an auxiliary layer to the semiconductor substrate, and patterning the auxiliary layer for the purpose of producing at least one trench which extends as far as the semiconductor substrate and which has opposite sidewalls. The method further includes producing a monocrystalline semiconductor layer on at least one of the sidewalls of the trench, producing an electrode insulated from the monocrystalline semiconductor layer on the at least one sidewall of the trench and the semiconductor substrate.
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22 Claims
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1. A method for producing a vertical transistor component, comprising:
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a) providing a semiconductor substrate, b) providing an auxiliary layer on the semiconductor substrate, c) patterning the auxiliary layer such that at least a first trench is produced that extends as far as a surface of the semiconductor substrate, the first trench having opposite sidewalls, d) producing a monocrystalline semiconductor layer on at least one of the sidewalls of the first trench, and e) producing an electrode insulated from the monocrystalline semiconductor layer and the semiconductor substrate, f) removing the auxiliary layer, thereby forming a second trench that extends to the substrate; g) introducing dopants of a conduction type that is complementary to the conduction type of the semiconductor substrate in the semiconductor substrate at the bottom of the second trench, thereby forming a further semiconductor zone that forms a pn-junction with the semiconductor substrate; h) forming an electrode in the second trench that contacts the further semiconductor zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for producing a vertical transistor component, comprising:
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a) providing a semiconductor substrate, b) applying an auxiliary layer to the semiconductor substrate, c) patterning the auxiliary layer to produce at least a first trench which extends to the semiconductor substrate, d) producing a monocrystalline semiconductor zone in the first trench, e) removing the auxiliary layer at least in sections, the removal of the auxiliary layer such that the monocrystalline semiconductor zone is in pillar form, f) producing an electrode insulated from the monocrystalline semiconductor zone and the semiconductor substrate, and further producing an insulation layer on sidewalls of the monocrystalline semiconductor zone, and on the semiconductor substrate, wherein producing the electrode comprises depositing an electrode material, wherein applying the auxiliary layer comprises providing an embedded electrode layer in the auxiliary layer in a manner spaced apart from the semiconductor substrate, wherein patterning the auxiliary layer comprises patterning the electrode layer together with the auxiliary layer, wherein removing the auxiliary layer comprises removing the auxiliary layer before the production of the electrode only in regions above the electrode layer, and g) providing an insulation layer on the electrode layer before step f). - View Dependent Claims (18, 19, 20, 21, 22)
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Specification