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Plasma immersion ion implantation reactor having an ion shower grid

  • US 7,767,561 B2
  • Filed: 07/20/2004
  • Issued: 08/03/2010
  • Est. Priority Date: 07/20/2004
  • Status: Expired due to Fees
First Claim
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1. A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece, comprising:

  • providing a reactor chamber with an ion shower grid that divides said chamber into an upper ion generation region and a lower process region, said ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of said ion shower grid;

    placing a workpiece in said process region;

    furnishing said selected species into said ion generation region;

    evacuating said process region;

    applying plasma source power to generate a plasma of said selected species in said ion generation region, and applying a grid potential to said ion shower grid to create a flux of ions from the plasma through said grid and into said process region;

    applying an RF bias voltage to said workpiece, said RF bias voltage corresponding to said desired ion implantation profile, whereby to implant said ions into said workpiece at a depth below a surface of the workpiece according to said ion implantation depth profile; and

    adjusting ion energy at said workpiece surface by adjusting the frequency of said RF bias voltage.

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