Light emitting diode and fabricating method thereof

• US 7,768,022 B2
• Filed: 04/19/2005
• Issued: 08/03/2010
• Est. Priority Date: 01/21/2005
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Tsai, Tzong-Liang, Chang, Chih-Sung, Chiang, Chang-Han, Wen, Way-Jze
• Primary Examiner(s): Hu; Shouxiang
• Assistant Examiner(s): Gebremariam; Samuel A
• Application Number:
  US11/109,345
• Publication Number:
  US 20060163592A1
• Time in Patent Office: 1,932 Days
• Field of Search: 257/98, 257/99, 257/100, 257/82, 257/E33.064, 257/E33.066
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.

Claims

1. A light emitting diode, comprising:

a substrate;

a transparent dielectric layer; and

a light emitting diode epitaxy structure comprising a first doped semiconductor layer, an active layer on the first doped semiconductor layer, and a second doped semiconductor layer on the active layer, wherein the light emitting diode epitaxy structure has a top surface, a bottom surface and two opposite sidewall regions on the substrate, and both sidewall regions of the light emitting diode epitaxy structure are covered by the transparent dielectric layer, and the top surface and the bottom surface of the light emitting diode epitaxy structure are not covered by the transparent dielectric layer.

2. The light emitting diode of claim 1, wherein the transparent dielectric layer comprises a material selected from a group consisting of SiO₂, Si₃N₄, benzocyclobutene and polyimide.

3. The light emitting diode of claim 1 further comprising an adhesive layer interposed between the substrate and the light emitting diode epitaxy structure.

4. The light emitting diode of claim 3, wherein the adhesive layer comprises a material selected from a group consisting of Au, Sn, In, Ag, Ge, Cu, Pb and an alloy thereof.

5. The light emitting diode of claim 1, wherein the first doped semiconductor layer is the n-type semiconductor layer and the second doped semiconductor is the p-type semiconductor layer.

6. The light emitting diode of claim 1, wherein the substrate is a conductive substrate.