Semiconductor die packages using thin dies and metal substrates
First Claim
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1. A semiconductor die package comprising:
- a planar metal substrate within the semiconductor die package;
a semiconductor die comprising a first surface comprising a first electrical terminal, a second surface including a second electrical terminal, and at least one aperture extending through the semiconductor die, wherein the metal substrate is attached to the second surface and exposed by the at least one aperture, wherein the semiconductor die has a thickness of about 30 microns or less; and
a plurality of solder structures on the semiconductor die, wherein the plurality of solder structures includes at least one first solder structure disposed on the first surface of the semiconductor die, and at least one second solder structure disposed in the at least one aperture,wherein the at least one second solder conductive structure is in electrical communication with the second terminal at the second surface of the semiconductor die, and the at least one second solder structure directly contacts a portion of the planar metal substrate.
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Abstract
A semiconductor die package is disclosed. The semiconductor die package comprises a metal substrate, and a semiconductor die comprising a first surface comprising a first electrical terminal, a second surface including a second electrical terminal, and at least one aperture. The metal substrate is attached to the second surface. A plurality of conductive structures is on the semiconductor die, and includes at least one conductive structure disposed in the at least one aperture. Other conductive structures may be disposed on the first surface of the semiconductor die.
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Citations
9 Claims
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1. A semiconductor die package comprising:
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a planar metal substrate within the semiconductor die package; a semiconductor die comprising a first surface comprising a first electrical terminal, a second surface including a second electrical terminal, and at least one aperture extending through the semiconductor die, wherein the metal substrate is attached to the second surface and exposed by the at least one aperture, wherein the semiconductor die has a thickness of about 30 microns or less; and a plurality of solder structures on the semiconductor die, wherein the plurality of solder structures includes at least one first solder structure disposed on the first surface of the semiconductor die, and at least one second solder structure disposed in the at least one aperture, wherein the at least one second solder conductive structure is in electrical communication with the second terminal at the second surface of the semiconductor die, and the at least one second solder structure directly contacts a portion of the planar metal substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification