Stackable tier structure comprising prefabricated high density feedthrough

• US 7,768,113 B2
• Filed: 05/26/2006
• Issued: 08/03/2010
• Est. Priority Date: 05/26/2005
• Status: Active Grant

• Current Assignee: Nytell Software LLC (Intellectual Ventures LLC)
• Original Assignee: Aprolase Development Co LLC (Intellectual Ventures LLC)
• Inventors: Ozguz, Volkan, Stern, Jonathan
• Primary Examiner(s): Fahmy; Wael
• Assistant Examiner(s): Ingham; John C
• Application Number:
  US11/441,908
• Publication Number:
  US 20060267213A1
• Time in Patent Office: 1,530 Days
• Field of Search: 257/784, 257/E25.023, 257/686, 257/778
• US Class Current: 257/686
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/24227 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06524 Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06589 Thermal management, e.g. cooling
• CPC Class Codes: H01L 2225/1005 the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 2225/1035 the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
• CPC Class Codes: H01L 2225/1058 Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 2225/1094 Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/52 Arrangements for conducting electric current within the device in operation from one component to another , i.e. interconnections, e.g. wires, lead frames optical interconnections G02B6/00
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/105 the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1627 : stacked type assemblies, e.g. stacked multi-cavities
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

A stackable tier structure comprising one or more integrated circuit die and one or more feedthrough structures is disclosed. The I/O pads of the integrated circuit die are electrically rerouted using conductive traces from the first side of the tier structure to a feedthrough structure comprising one ore more conductive structures. The conductive structures electrically route the integrated die pads to predetermined locations on the second side of the tier structure. The predetermined locations, such as exposed conductive pads or conductive posts, in turn, may be interconnected to a second tier structure or other circuitry to permit the fabrication of a three-dimensional microelectronic module comprising one or more stacked tiers.

Claims

1. A tier structure comprising:

a tier frame including a first tier side, a second tier side, and an integrated circuit die that comprises an I/O pad and a feedthrough structure, wherein the feedthrough structure includes a conductive structure configured to route electrical signals between the first tier side and the second tier side, and wherein the I/O pad is electrically connected to the conductive structure by a conductive trace;

an exposed electrically conductive pad disposed on the first tier side or the second tier side, wherein the exposed electrically conductive pad is electrically connected to the conductive structure; and

a conductive metallized polymer column disposed on the exposed electrically conductive pad, wherein the conductive metallized polymer column includes a photoresist, and wherein the exposed electrically conductive pad is configured for electrical connection to another tier frame.

2. The tier structure of claim 1, wherein the conductive structure comprises a prefabricated conductive via structure.

3. The tier structure of claim 2, further comprising an aperture formed by a dry reactive ion etch process and configured to receive the prefabricated conductive via structure.

4. The tier structure of claim 1, wherein the tier frame further comprises a molded dielectric material.

5. The tier structure of claim 1, wherein the tier frame further comprises a polyimide material.

6. The tier structure of claim 1, wherein the tier frame further comprises silicon and wherein the conductive structure comprises a conductive via defined in the tier frame.

7. The tier structure of claim 6, wherein the silicon has a resistivity of 100 ohms per centimeter.

8. The tier structure of claim 1, wherein the conductive structure comprises a prefabricated metallized polymer column.

9. The tier structure of claim 1, wherein the conductive structure comprises a prefabricated stacked stud bump.

10. The tier structure of claim 1, wherein the exposed electrically conductive pad is electrically connected to the conductive structure by the conductive trace.

11. The tier structure of claim 1, further comprising a solder material disposed between the exposed electrically conductive pad and the conductive metallized polymer column.

12. The tier structure of claim 1, wherein the conductive metallized polymer column is formed from a solderable photoresist.

13. The tier structure of claim 1, wherein the conductive metallized polymer column is formed from a columnar SU-8 structure.

14. The tier structure of claim 1, wherein the conductive metallized polymer column comprises an anisotropic conductive film.

15. The tier structure of claim 1, wherein the conductive metallized polymer column comprises an anisotropic conductive paste.

16. A stack comprising:

a first tier structure including a first tier frame that comprises a first tier side, a second tier side, and a first integrated circuit that includes a first I/O pad and a first feedthrough structure, wherein the first feedthrough structure comprises a first conductive structure electrically connected to the first I/O pad by a first conductive trace and configured to route electrical signals between the first tier side and the second tier side;

a second tier structure including a second tier frame that comprises a third tier side, a fourth tier side, and a second integrated circuit that includes a second I/O pad and a second feedthrough structure, wherein the second feedthrough structure comprises a second conductive structure electrically connected to the second I/O pad by a second conductive trace and configured to route electrical signals between the third tier side and the fourth tier side;

a first electrically conductive pad electrically connected to the first conductive structure and disposed on the first tier side or the second tier side;

a second electrically conductive pad electrically connected to the second conductive structure and disposed on the third tier side or the fourth tier side; and

a metallized polymer column configured to electrically connect the first I/O pad to the second I/O pad, wherein the metallized polymer column includes a photoresist.

17. The stack of claim 16, wherein the metallized polymer column comprises an anisotropic conductive film.

18. The stack of claim 16, wherein the metallized polymer column comprises an anisotropic conductive paste.

19. The stack of claim 16, further comprising a thermal management layer disposed between the first tier structure and the second tier structure.

20. The stack of claim 16, wherein the first electrically conductive pad is electrically connected to the first conductive structure by the first conductive trace, and wherein the second electrically conductive pad is electrically connected to the second conductive structure by the second conductive trace.

21. The stack of claim 16, wherein each of the first conductive structure and the second conductive structure comprises a prefabricated conductive via structure.

22. The stack of claim 16, wherein at least one of the first conductive structure or the second conductive structure comprises a prefabricated metallized polymer column.

23. The stack of claim 16, further comprising a first solder material disposed between the metallized polymer column and at least one of the first electrically conductive pad or the second electrically conductive pad.

24. The stack of claim 16, further comprising a copper shim disposed between the first tier structure and the second tier structure.