Crystal oscillator emulator

• US 7,768,360 B2
• Filed: 01/04/2007
• Issued: 08/03/2010
• Est. Priority Date: 10/15/2002
• Status: Active Grant

• Current Assignee: Marvell Asia Pte Limited (Marvell Technology Group Limited)
• Original Assignee: Marvell World Trade Limited (Marvell Technology Group Limited)
• Inventors: Sutardja, Sehat
• Primary Examiner(s): KINKEAD, ARNOLD M
• Application Number:
  US11/649,433
• Publication Number:
  US 20070176690A1
• Time in Patent Office: 1,307 Days
• Field of Search: 331/158, 331/116.R, 331/116.FE, 331/176, 331/2, 331/74, 331/57
• US Class Current: 331/176
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 2029/5002 Characteristic
• CPC Class Codes: G11C 2207/2254 Calibration
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects
• CPC Class Codes: G11C 7/22 Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
• CPC Class Codes: G11C 7/222 Clock generating, synchronizing or distributing circuits within memory device
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/315 the encapsulation having a cavity
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/166 Material
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H03B 5/04 : Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
• CPC Class Codes: H03B 5/30 : with frequency-determining element being electromechanical resonator
• CPC Class Codes: H03L 1/026 : by using a memory for digitally storing correction values H03L1/025 takes precedence
• CPC Class Codes: H03L 1/027 : by using frequency conversion means which is variable with temperature, e.g. mixer, frequency divider, pulse add/substract logic circuit H03L1/023, H03L1/026 take precedence
• CPC Class Codes: H03L 5/00 : Automatic control of voltage, current, or power
• CPC Class Codes: H03L 7/08 : Details of the phase-locked loop
• CPC Class Codes: H03L 7/0802 : the loop being adapted for reducing power consumption H03L7/14 takes precedence
• CPC Class Codes: H03L 7/0891 : the up-down pulses controlling source and sink current generators, e.g. a charge pump
• CPC Class Codes: H03L 7/197 : a time difference being used for locking the loop, the counter counting between numbers which are variable in time or the frequency divider dividing by a factor variable in time, e.g. for obtaining fractional frequency division H03L7/1806 takes precedence
• CPC Class Codes: H03L 7/1974 : for fractional frequency division
• CPC Class Codes: H03L 7/1976 : using a phase accumulator for controlling the counter or frequency divider

Abstract

A crystal oscillator emulator integrated circuit, comprises a first temperature sensor that senses a first temperature of the integrated circuit; memory that stores calibration parameters and that selects at least one of the calibration parameters based on the first temperature; a semiconductor oscillator that generates an output signal having a frequency that is based on the calibration parameters; and an adaptive calibration circuit that adaptively adjusts a calibration approach for generating the calibration parameters based on a number of temperature test points input thereto.

Claims

1. A crystal oscillator emulator integrated circuit, comprising:

a first temperature sensor that senses a first temperature of said integrated circuit;

memory that stores calibration parameters and that selects at least one of said calibration parameters based on said first temperature;

a semiconductor oscillator that generates an output signal having a frequency that is based on said calibration parameters; and

an adaptive calibration circuit that adaptively adjusts a calibration approach for generating said calibration parameters based on a number of temperature test points input thereto.

2. The crystal oscillator emulator integrated circuit of claim 1 further comprising a select input that selects said frequency of said output signal frequency as a function of an external passive component.

3. The crystal oscillator emulator integrated circuit of claim 1 wherein said first temperature is a die temperature adjacent to said semiconductor oscillator.

4. The crystal oscillator emulator integrated circuit of claim 1 further comprising:

a heater that adjusts said first temperature; and

a disabling circuit that disables said heater after said calibration parameters are stored.

5. The crystal oscillator emulator integrated circuit of claim 4 wherein said heater operates in response to said first temperature sensor.

6. The crystal oscillator emulator integrated circuit of claim 1 wherein when test data consists of a single temperature test point, said adaptive calibration circuit employs at least one of a slope of a predetermined temperature characteristic line and a curvature of predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

7. The crystal oscillator emulator integrated circuit of claim 1 wherein when test data consists of two temperature test points, said adaptive calibration circuit employs at least one of a slope of a predetermined temperature characteristic line and a curvature of predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

8. The crystal oscillator emulator integrated circuit of claim 1 wherein when test data consists of two temperature test points, said adaptive calibration circuit adjusts at least one of a slope of a predetermined temperature characteristic line and a curvature of a predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

9. The crystal oscillator emulator integrated circuit of claim 1 wherein when test data comprises three temperature test points, said adaptive calibration circuit adjusts at least one of a slope of a predetermined temperature characteristic line and a curvature of a predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

10. The crystal oscillator emulator integrated circuit of claim 1 wherein said memory includes one time programmable memory.

42. The crystal oscillator emulator integrated circuit of claim 1 wherein said semiconductor oscillator comprises an inductance that includes one of Gold or Copper.

11. A crystal oscillator emulator integrated circuit, comprising:

first temperature sensing means for sensing a first temperature of said integrated circuit;

storing means for storing calibration parameters and for selecting at least one of said calibration parameters based on said first temperature;

semiconductor oscillating means for generating an output signal having a frequency that is based on said calibration parameters; and

adaptive calibration means for adaptively adjusting a calibration approach for generating said calibration parameters based on a number of temperature test points input thereto.

12. The crystal oscillator emulator integrated circuit of claim 11 further comprising a select input that selects said frequency of said output signal frequency as a function of an external passive component.

13. The crystal oscillator emulator integrated circuit of claim 11 wherein said first temperature is a die temperature adjacent to said semiconductor oscillating means.

14. The crystal oscillator emulator integrated circuit of claim 11 further comprising:

heating means for adjusting said first temperature; and

disabling means for disabling said heating means after said calibration parameters are stored.

15. The crystal oscillator emulator integrated circuit of claim 14 wherein said heating means operates in response to said first temperature sensing means.

16. The crystal oscillator emulator integrated circuit of claim 11 wherein when test data consists of a single temperature test point, said adaptive calibration means employs at least one of a slope of a predetermined temperature characteristic line and a curvature of predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

17. The crystal oscillator emulator integrated circuit of claim 11 wherein when test data consists of two temperature test points, said adaptive calibration means employs at least one of a slope of a predetermined temperature characteristic line and a curvature of predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

18. The crystal oscillator emulator integrated circuit of claim 11 wherein when test data consists of two temperature test points, said adaptive calibration means adjusts at least one of a slope of a predetermined temperature characteristic line and a curvature of a predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

19. The crystal oscillator emulator integrated circuit of claim 11 wherein when test data comprises three temperature test points, said adaptive calibration means adjusts at least one of a slope of a predetermined temperature characteristic line and a curvature of a predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

20. The crystal oscillator emulator integrated circuit of claim 11 wherein said storing means includes one time programmable memory.

43. The crystal oscillator emulator integrated circuit of claim 11 wherein said semiconductor oscillating means comprises inductance means for providing inductance that includes one of Gold or Copper.

21. A method comprising:

sensing a first temperature of an integrated circuit;

storing calibration parameters;

selecting at least one of said calibration parameters based on said first temperature;

providing a semiconductor oscillator that generates an output signal having a frequency that is based on said calibration parameters; and

adaptively adjusting a calibration approach for generating said calibration parameters based on a number of temperature test points input thereto.

22. The method of claim 21 further comprising selecting said frequency of said output signal frequency as a function of an external passive component.

23. The method of claim 21 wherein said first temperature is a die temperature adjacent to said semiconductor oscillator.

24. The method of claim 21 further comprising:

selectively adjusting said first temperature using a heater; and

disabling said heater after said calibration parameters are stored.

25. The method of claim 24 wherein said heater operates in response to a first temperature sensor.

26. The method of claim 21 wherein when test data consists of a single temperature test point, further comprising:

employing at least one of a slope of a predetermined temperature characteristic line and a curvature of predetermined temperature characteristic curve; and

adjusting a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

27. The method of claim 21 wherein when test data consists of two temperature test points, further comprising:

employing at least one of a slope of a predetermined temperature characteristic line and a curvature of predetermined temperature characteristic curve; and

adjusting a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

28. The method of claim 21 wherein when test data consists of two temperature test points, further comprising:

adjusting at least one of a slope of a predetermined temperature characteristic line and a curvature of a predetermined temperature characteristic curve; and

adjusting a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

29. The method of claim 21 wherein when test data comprises three temperature test points, further comprising:

adjusting at least one of a slope of a predetermined temperature characteristic line and a curvature of a predetermined temperature characteristic curve; and

adjusting a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on said test data.

30. The method of claim 21 wherein said memory includes one time programmable memory.

44. The method of claim 21 wherein said semiconductor oscillator comprises an inductance that includes one of Gold or Copper.

31. An integrated circuit comprising:

a crystal oscillator emulator that comprises;

a first temperature sensor that senses a first temperature of said integrated circuit;

memory that stores calibration parameters that are addressed based on said first temperature; and

a semiconductor oscillator that generates an output signal having a frequency that is based on said calibration parameters,

wherein said integrated circuit does not include other circuits unrelated to operation of said crystal oscillator emulator.

32. The integrated circuit of claim 31 wherein said crystal oscillator emulator further comprises a select input that selects said frequency of said output signal as a function of an external passive component.

33. The integrated circuit of claim 31 wherein said crystal oscillator emulator further comprises a heater that selectively adjusts said first temperature.

34. The integrated circuit of claim 33 wherein said heater operates in response to said first temperature sensor.

35. The integrated circuit of claim 33 wherein said heater is selected from a group consisting of transistor heaters and resistive heaters.

36. The integrated circuit of claim 31 further comprising a calibration circuit that communicates with said memory and generates said calibration parameters.

37. The integrated circuit of claim 36 wherein said calibration circuit employs at least one of a slope of a predetermined temperature characteristic line and a curvature of predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on test data, and wherein said test data consists of a single temperature test point.

38. The integrated circuit of claim 36 wherein said calibration circuit employs at least one of a slope of a predetermined temperature characteristic line and a curvature of predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on test data, and wherein said test data consists of two temperature test points.

39. The integrated circuit of claim 36 wherein said calibration circuit adjusts at least one of a slope of a predetermined temperature characteristic line and a curvature of a predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on test data, and wherein said test data consists of two temperature test points.

40. The integrated circuit of claim 36 wherein said calibration circuit adjusts at least one of a slope of a predetermined temperature characteristic line and a curvature of a predetermined temperature characteristic curve, and adjusts a location of said at least one of said predetermined temperature characteristic line and said predetermined temperature characteristic curve based on test data, and wherein said test data comprises three temperature test points.

41. The integrated circuit of claim 31 wherein said semiconductor oscillator comprises an inductance that includes one of Gold or Copper.