Substrate support having heat transfer system

• US 7,768,765 B2
• Filed: 03/08/2007
• Issued: 08/03/2010
• Est. Priority Date: 04/22/2003
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Cheng, Wing Lau, Wong, Kwok Manus, Kats, Semyon L., Ye, Yan, Hoffman, Daniel J., Ramaswamy, Kartik, Hanawa, Hiroji, Ishikawa, Tetsuya, Nguyen, Andrew, Lue, Brian C.
• Primary Examiner(s): Nguyen; Danny
• Application Number:
  US11/683,994
• Publication Number:
  US 20070165356A1
• Time in Patent Office: 1,244 Days
• Field of Search: 361230-234, 438/716
• US Class Current: 361/234
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.

Claims

1. A substrate support comprising:

(a) a substrate receiving surface;

(b) upper and lower walls below the substrate receiving surface, the upper wall comprising a recessed trench comprising an attachment face at a first depth and a fluid circulating channel at a second depth, the fluid circulating channel being doubled over upon itself, and the lower wall being sized to seat in the recessed trench and fit to the attachment face to close the fluid circulating channel;

(c) a reservoir below the fluid circulating channel, the reservoir comprising a third wall that is joined by a peripheral sidewall to the lower wall;

(d) a fluid inlet to supply a heat transfer fluid to the fluid circulating channel; and

(e) a fluid outlet to discharge the heat transfer fluid from the fluid circulating channel.

2. A support according to claim 1 wherein the channel is doubled over to turn back upon itself to provide a turbulent flow of fluid passing therethrough.

3. A support according to claim 1 wherein the channel curves back and forth along its length, so that each back and forth turn can have a counter-flow of fluid passing through therein.

4. A support according to claim 3 comprising at least 1 turn per 5 centimeters of channel length.

5. A support according to claim 1 wherein the channel comprises a first length having a first cross-section, and a second length having a second cross-section.

6. A support according to claim 1 wherein the channel has a roughened internal surface with a root mean square roughness value of at least about 125 microns.

7. A support according to claim 1 wherein the channel comprises a plurality of integral fins therein.

8. A support according to claim 7 wherein the integral fins have an aspect ratio of height to thickness of at least about 10:

1.

9. A support according to claim 7 wherein the integral fins extend downwardly from the upper wall to define gaps with the lower wall.

10. A support according to claim 1 wherein the substrate receiving surface is on a chuck capable of holding the substrate.

11. A support according to claim 10 wherein the chuck comprises an electrostatic chuck having an electrode covered by a dielectric, and an electrical contact to charge the electrode.

12. A support according to claim 1 wherein the channel extends across at least about 60% of the area of the substrate receiving surface.

13. A substrate processing chamber comprising a substrate support according to claim 1, the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

14. A support according to claim 1 wherein the upper wall is electron beam brazed or welded to the lower wall at the attachment face.

15. A support according to claim 1 wherein the channel has a smaller width than the recessed trench.

16. A support according to claim 1 wherein the channel has an aspect ratio of depth to width of from about 2:

1 to about 4;

1.

17. A substrate support comprising:

(a) a substrate receiving surface;

(b) an upper wall below the substrate receiving surface, the upper wall comprising a fluid circulating channel that is doubled over upon itself;

(c) a lower wall to close the fluid circulating channel;

(d) a reservoir below the fluid circulating channel, the reservoir comprising a third wall that is joined by a peripheral side wall to the lower wall;

(e) a fluid inlet to supply a heat transfer fluid to the fluid circulating channel; and

(f) a fluid outlet to discharge the heat transfer fluid from the fluid circulating channel.

18. A support according to claim 17 wherein the channel is in a recessed trench, and the channel has a width that is smaller than the width of the recessed trench.

19. A support according to claim 17 wherein the channel has an aspect ratio of depth to width of from about 2:

1 to about 4;

1.

20. A support according to claim 17 wherein the channel comprises a first length having a first cross-section, and a second length having a second cross-section.

21. A support according to claim 17 wherein the channel has a roughened internal surface with a root mean square roughness value of at least about 125 microns.

22. A support according to claim 17 wherein the channel comprises a plurality of integral fins therein.

23. A support according to claim 17 wherein the substrate receiving surface is on an electrostatic chuck capable of holding the substrate.

24. A support according to claim 17 wherein the channel extends across at least about 60% of the area of the substrate receiving surface.

25. A support according to claim 17 wherein the upper wall is electron beam brazed or welded to the lower wall.

26. A substrate processing chamber comprising a substrate support according to claim 17, the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

27. A substrate support comprising:

(a) an electrostatic chuck comprising a substrate receiving surface;

(b) upper and lower walls below the substrate receiving surface the upper wall comprising a fluid circulating channel doubled over upon itself, and the lower wall provided to close the fluid circulating channel;

(c) a reservoir below the fluid circulating channel, the reservoir comprising a third wall that is joined by a peripheral sidewall to the lower wall;

(d) a fluid inlet to supply a heat transfer fluid to the fluid circulating channel; and

(e) a fluid outlet to discharge the heat transfer fluid from the fluid circulating channel.

28. A support according to claim 27 wherein the channel is doubled over to turn back upon itself to provide turbulent flow of fluid passing therethrough.

29. A support according to claim 27 wherein the channel curves back and forth along its length, so that each back and forth turn can have a counter-flow of fluid passing through therein.

30. A support according to claim 29 comprising at least 1 turn per 5 centimeters of channel length.

31. A support according to claim 27 wherein the channel has an aspect ratio of depth to width of from about 2:

1 to about 4;

1.

32. A support according to claim 27 wherein the channel comprises a first length having a first cross-section, and a second length having a second cross-section.