Flash memory device with write driver and bit line detecting driving circuits

• US 7,768,837 B2
• Filed: 10/12/2007
• Issued: 08/03/2010
• Est. Priority Date: 11/23/2006
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Dong-Woo, Choi, Jong-In
• Primary Examiner(s): Nguyen; Tuan T
• Assistant Examiner(s): REIDLINGER, RONALD LANCE
• Application Number:
  US11/871,371
• Publication Number:
  US 20080123431A1
• Time in Patent Office: 1,026 Days
• Field of Search: 365/185.23, 365/185.28
• US Class Current: 365/185.23
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/24 Bit-line control circuits

Abstract

A flash memory device and a method of programming a flash memory device include selecting bit lines connected to program cells of multiple memory cells coupled to a selected word line. The selected bit lines are driven to a bit line program voltage through a write driver circuit connected to first ends of the selected bit lines. The selected bit lines are also driven to the bit line program voltage through a bit line detecting/driving circuit connected to second ends of the selected bit lines. The bit line detecting/driving circuit activates the selected bit lines synchronously with voltage variations of the selected bit lines.

Claims

1. A flash memory device comprising:

a memory cell array comprising a plurality of memory cells arranged in a matrix comprising a plurality of word lines and a plurality of bit lines;

a column decoder configured to select at least one bit line of the plurality of bit lines in response to a column address;

a write driver circuit configured to drive the at least one selected bit line to a bit line voltage in accordance with input data in response to an enable signal; and

a bit line detecting/driving circuit configured to drive the at least one selected bit line to the bit line voltage, while the write driver circuit continues to drive the at least one selected bit line, when the bit line detecting/driving circuit detects variations of the at least one selected bit line from the bit line voltage, in response to a decoding result of the column address during a programming operation,

wherein the bit line detecting/driving circuit comprises;

a switch circuit for connecting the at least one bit line of the plurality of bit lines in response to the decoding result of the column address; and

a plurality of bit line detector/driver units, at least one bit line detector/driver unit being connected to the at least one selected bit line through the switch circuit, the bit line detecting/driving unit detecting voltages from the at least one bit line and driving the at least one selected bit line to the bit line voltage in accordance with the detected voltages, and

wherein each of the bit line detecting/driving units comprises;

a PMOS transistor connected between the bit line voltage and an output terminal;

an NMOS transistor connected between the output terminal and a ground voltage, the NMOS transistor being controlled by a control signal from a controller; and

a detector configured to detect voltage variation of the output terminal and to control the PMOS transistor in response to the voltage variation detection.

2. The flash memory device as set forth in claim 1, wherein the detector comprises an inverter.

3. The flash memory device as set forth in claim 1, wherein the control signal is complementary to the decoding result of the column address.

4. The flash memory device as set forth in claim 3, wherein the decoding result of the column address is activated before activation of the enable signal.