Methods and systems for detecting defects in a reticle design pattern
First Claim
1. A computer-implemented method for detecting defects in a reticle design pattern, comprising:
- acquiring images of a field in the reticle design pattern, wherein the images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the field comprises a first die and a second die;
detecting defects in the field by comparing two or more of the images to each other, wherein the two or more of the images that are compared to each other correspond to two or more of the different values;
determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die; and
assigning a composite priority to the individual defects based on results of said determining in combination with the different values of the one or more parameters of the wafer printing process corresponding to the images of the field in which the individual effects in the first and second die were detected.
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Accused Products
Abstract
Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of a field in the reticle design pattern. The images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process. The field includes a first die and a second die. The method also includes detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values. In addition, the method includes determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.
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Citations
19 Claims
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1. A computer-implemented method for detecting defects in a reticle design pattern, comprising:
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acquiring images of a field in the reticle design pattern, wherein the images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the field comprises a first die and a second die; detecting defects in the field by comparing two or more of the images to each other, wherein the two or more of the images that are compared to each other correspond to two or more of the different values; determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die; and assigning a composite priority to the individual defects based on results of said determining in combination with the different values of the one or more parameters of the wafer printing process corresponding to the images of the field in which the individual effects in the first and second die were detected. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A system configured to detect defects in a reticle design pattern, comprising:
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an optical subsystem configured to acquire images of a field in the reticle design pattern, wherein the images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the field comprises a first die and a second die; and a processor coupled to the optical subsystem, wherein the processor is configured to; detect defects in the field by comparing two or more of the images to each other, wherein the two or more of the images that are compared to each other correspond to two or more of the different values; determine if individual defects located in the first die have substantially the same within die position as individual defects located in the second die; and assign a composite priority to the individual defects based on results of determining if the individual defects located in the first die have substantially the same within die position as the individual defects located in the second die in combination with the different values of the one or more parameters of the wafer printing process corresponding to the images of the field in which the individual defects in the first and second die were detected. - View Dependent Claims (16, 17, 18)
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19. A system configured to detect defects in a reticle design pattern, comprising:
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a simulation engine configured to generate simulated images of a field in the reticle design pattern, wherein the simulated images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the field comprises a first die and a second die; and a processor coupled to the simulation engine, wherein the processor is configured to; detect defects in the field by comparing two or more of the simulated images to each other, wherein the two or more of the simulated images that are compared to each other correspond to two or more of the different values; determine if individual defects located in the first die have substantially the same within die position as individual defects located in the second die; and assign a composite priority to the individual defects based on results of determining if the individual defects located in the first die have substantially the same within die position as the individual defects located in the second die in combination with the different values of the one or more parameters of the wafer printing process corresponding to the images of the field in which the individual defects in the first and second die were detected.
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Specification