Method and apparatus for depositing a magnetoresistive multilayer film

• US 7,771,570 B2
• Filed: 11/30/2007
• Issued: 08/10/2010
• Est. Priority Date: 10/16/2003
• Status: Active Grant

• Current Assignee: Canon Anelva Corporation (Canon Inc.)
• Original Assignee: Canon Anelva Corporation (Canon Inc.)
• Inventors: Tsunekawa, Koji, Djayaprawira, David Djulianto, Nagai, Motonobu
• Primary Examiner(s): Neckel; Alexa D
• Assistant Examiner(s): BAND, MICHAEL A
• Application Number:
  US11/948,822
• Publication Number:
  US 20080142156A1
• Time in Patent Office: 984 Days
• Field of Search: 204/192.2, 360/113, 360/324.11, 360/324.12
• US Class Current: 204/192.2
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/39 using magneto-resistive devices or effects
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: H01F 10/30 characterised by the composition of the intermediate layers , e.g. seed, buffer, template, diffusion preventing, cap layers H01F10/06 and H01F10/32 take precedence
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 41/18 by cathode sputtering
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: Y10T 29/49025 Making disc drive
• CPC Class Codes: Y10T 29/49032 Fabricating head structure or component thereof
• CPC Class Codes: Y10T 29/49034 Treating to affect magnetic properties
• CPC Class Codes: Y10T 29/49043 Depositing magnetic layer or coating
• CPC Class Codes: Y10T 29/49044 Plural magnetic deposition layers

Abstract

This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Claims

1. A method for manufacturing a magnetoresistive multilayer film, comprising:

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

depositing a film for the antiferromagnetic layer by a sputtering process as oxygen gas is added to a gas for sputtering; and

depositing films for the pinned-magnetization layer, the nonmagnetic spacer layer and the free-magnetization layer by sputtering processes as oxygen gas is not added to a gas for sputtering,

wherein the film for the antiferromagnetic layer is made of PtMn alloy or IrMn alloy.

4. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 1, further comprising:

providing an extra layer between the substrate and the antiferromagnetic layer; and

depositing a film for the extra layer by a sputtering process as oxygen gas is added to a gas for sputtering.

5. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 4, wherein:

the extra layer is a seed layer; and

the film for the extra layer is made of tantalum.

6. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 1, wherein:

in the pinned-magnetization layer, a direction of magnetization is pinned by coupling with the antiferromagnetic layer; and

in the free-magnetization layer, a direction of magnetization is free.

9. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 5, wherein the seed layer controls crystal orientations in another layer laminated thereon.

2. A method for manufacturing a magnetoresistive multilayer film, comprising:

laminating an extra layer, an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

depositing a film for the extra layer by a sputtering process as oxygen gas is added to a gas for sputtering;

depositing a film for the antiferromagnetic layer by a sputtering process as oxygen gas is added to a gas for sputtering; and

depositing films for the pinned-magnetization layer, the nonmagnetic spacer layer and the free-magnetization layer by sputtering processes as oxygen gas is not added to a gas for sputtering,

wherein the film for the antiferromagnetic layer is made of PtMn alloy or IrMn alloy.

3. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 2, wherein:

the extra layer is a seed layer; and

the film for the extra layer is made of tantalum.

7. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 2, wherein:

in the pinned-magnetization layer, a direction of magnetization is pinned by coupling with the antiferromagnetic layer; and

in the free-magnetization layer, a direction of magnetization is free.

8. A method for manufacturing a magnetoresistive multilayer film as claimed in claim 3, wherein the seed layer controls crystal orientations in another layer laminated thereon.