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Plasma processing method and film forming method

  • US 7,771,796 B2
  • Filed: 11/04/2005
  • Issued: 08/10/2010
  • Est. Priority Date: 11/09/2004
  • Status: Expired due to Fees
First Claim
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1. A plasma processing method for carrying out curing processing on a low dielectric constant film produced on a to-be-processed substrate by applying plasma thereto in a processing chamber of a plasma processing apparatus, comprising the steps of:

  • a) introducing, in the plasma processing chamber, a first gas having a function of stabilizing plasma and a second gas generating active hydrogen, both the first gas and the second gas being introduced for a predetermined period of time with no generation of plasma; and

    after the predetermined period of time has elapsed, b) generating plasma, and carrying out curing processing on the low dielectric constant film.

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