Method of fabricating vertical devices using a metal support film
First Claim
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1. A method of producing light emitting devices, comprising:
- forming a plurality of semiconductor layers over a substrate;
forming trenches into the semiconductor layers, wherein the trenches define individual devices;
removing the substrate from the semiconductor layers;
forming a reflective structure over the semiconductor layers, wherein the reflective structure is configured to reflect light from the semiconductor layers;
providing a conductive support structure over the reflective structure;
forming openings at the conductive support structure, the openings defining individual conductive supports, wherein the openings are substantially aligned with the trenches; and
separating the devices with conductive support.
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Abstract
A vertical topology device includes a conductive adhesion structure having a first surface and a second surface, a conductive thick film support formed on the first surface, and a semiconductive device having an upper electrical contact and located over the conductive adhesion layer. Electrical current can flow between the conductive thick film and the upper electrical contact.
124 Citations
25 Claims
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1. A method of producing light emitting devices, comprising:
- forming a plurality of semiconductor layers over a substrate;
forming trenches into the semiconductor layers, wherein the trenches define individual devices;
removing the substrate from the semiconductor layers;
forming a reflective structure over the semiconductor layers, wherein the reflective structure is configured to reflect light from the semiconductor layers;
providing a conductive support structure over the reflective structure;
forming openings at the conductive support structure, the openings defining individual conductive supports, wherein the openings are substantially aligned with the trenches; and
separating the devices with conductive support. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
- forming a plurality of semiconductor layers over a substrate;
Specification