Semiconductor device

• US 7,772,049 B2
• Filed: 11/07/2007
• Issued: 08/10/2010
• Est. Priority Date: 01/25/2005
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Herman, Gregory, Hoffman, Randy, Mardilovich, Peter
• Primary Examiner(s): Mulpuri; Savitri
• Assistant Examiner(s): Choi; Calvin
• Application Number:
  US11/936,721
• Publication Number:
  US 20080108177A1
• Time in Patent Office: 1,007 Days
• Field of Search: 438/104, 438106-127, 438/129, 438/584, 257/40, 257/E21.372, 257/E21.411, 257/E29.277, 257/E29.117, 257/43
• US Class Current: 438/149
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula A_xB_xO_x, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Claims

1. A method of forming a channel, comprising:

providing at least one precursor composition including one or more precursor compounds that include a compound A_xB_x, wherein each A is selected from the group of Cu, Ag, each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, each x is independently a non-zero integer, and wherein each of A and B are different; and

depositing the channel including the precursor composition to form a multi-cation oxide from the precursor composition to electrically couple a drain electrode and a source electrode.

2. The method of claim 1, including providing a substrate or substrate assembly;

and

forming the channel device on the substrate or substrate assembly.

3. The method of claim 1, wherein depositing the channel includes depositing one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

4. The method of claim 1, wherein the precursor composition includes a liquid form.

5. The method of claim 4, wherein depositing the channel includes an ink jet deposition technique when the precursor composition includes the liquid form.

6. The method of claim 1, wherein the one or more precursor compounds includes one or more precursor compounds that include C_X, wherein each C is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

7. The method of claim 6, wherein the one or more precursor compounds includes one or more precursor compounds that include D_X, wherein each D is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

8. The method of claim 7, wherein the one or more precursor compounds includes one or more precursor compounds that include E_x, wherein E is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each x is independently a non-zero integer, and wherein each of A, B, C, D, and E are different.

9. The method of claim 8, wherein depositing a channel includes a step for vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of DC sputtering, DC-pulsed sputtering, RF sputtering, magnetron sputtering, ion beam sputtering, or reactive sputtering.

10. A method of manufacturing a semiconductor device, comprising:

providing a drain electrode;

providing a source electrode;

providing a precursor composition including one or more precursor compounds that include a compound A_xB_x, wherein each A is selected from the group of Cu, Ag, Sb each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, each x is independently a non-zero integer, and wherein each of A and B are different;

depositing a channel including depositing the precursor composition to form a multi-cation oxide from the precursor composition to electrically couple the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

11. The method of claim 10, wherein providing the source, the drain, and the gate electrodes includes providing a substantially transparent form of the source, the drain, and the gate electrodes.

12. The method of claim 10, wherein the one or more precursor compounds includes one or more precursor compounds that include C_X, wherein each C is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

13. The method of claim 12, wherein the one or more precursor compounds includes one or more precursor compounds that include D_X, wherein each D is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

14. The method of claim 13, wherein the one or more precursor compounds includes one or more precursor compounds that include E_x, wherein each E is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each x is independently a non-zero integer, and wherein each of A, B, C, D, and E are different.

15. The method of claim 14, wherein the step for depositing a channel includes a step for vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc sputtering, dc-pulsed sputtering, rf sputtering, magnetron sputtering, ion beam sputtering, or reactive sputtering.

16. The method of claim 14, wherein the step for depositing a channel includes an ink-jet deposition technique.