Method for manufacturing devices on a multi-layered substrate utilizing a stiffening backing substrate

• US 7,772,088 B2
• Filed: 02/24/2006
• Issued: 08/10/2010
• Est. Priority Date: 02/28/2005
• Status: Active Grant

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J., Sullivan, James Andrew, Kirk, Harry Robert
• Primary Examiner(s): Pham, Thanh V
• Application Number:
  US11/361,834
• Publication Number:
  US 20060205180A1
• Time in Patent Office: 1,628 Days
• Field of Search: 438/455, 438/458, 438/459, 438/471, 438/472, 257/E21.568, 257/E21.122
• US Class Current: 438/458
• CPC Class Codes: B81C 1/00357 involving bonding one or several substrates on a non-temporary support, e.g. another substrate
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers

Abstract

A multilayered substrate structure comprising one or more devices, e.g., optoelectronic, integrated circuit. The structure has a handle substrate, which is characterized by a predetermined thickness and a Young'"'"'s modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal. The structure also has a thickness of substantially crystalline material coupled to the handle substrate. Preferably, the thickness of substantially crystalline material ranges from about 100 microns to about 5 millimeters. The structure has a cleaved surface on the thickness of substantially crystalline material and a surface roughness characterizing the cleaved film of less than 200 Angstroms. At least one or more optoelectronic devices is provided on the thickness of material.

Claims

1. A method for manufacturing one or more devices on multi-layered substrates, the method comprising:

providing a handle substrate, the handle substrate having a first deflection characteristic, the handle substrate having a backside and a face;

determining a desired thickness of a backing substrate such that the backing substrate being adequate to cause the first deflection characteristic of the handle substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for a thickness of material to be transferred onto the face of the handle substrate;

coupling the backing substrate having the desired thickness to the backside of the handle substrate to form a multilayered structure;

providing a donor substrate comprising a cleave region, the thickness of material, and a surface region, the cleave region being within the donor substrate to define the thickness of material, the thickness of material being provided between the cleave region and the surface region;

bonding the surface region of the donor substrate to the face of the handle substrate, while the backing substrate remains attached with the handle substrate to maintain at least the deflection characteristic;

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region;

removing the thickness of material from the donor substrate; and

forming one or more devices on a portion of the thickness of material.

2. The method of claim 1 wherein the handle substrate is selected from quartz, glass, or a glass material.

3. The method of claim 1 wherein the handle substrate is selected from a material consisting of a plastic, a polymer, a ceramic, or a composite.

4. The method of claim 1 wherein the handle substrate comprises a metal bearing material.

5. The method of claim 1 wherein the donor substrate comprises a backing member coupled to a backside of the donor substrate, the backing member providing rigidity to the donor substrate.

6. The method of claim 1 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness less than 50 Angstroms.

7. The method of claim 1 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 100 Angstroms.

8. The method of claim 1 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 200 Angstroms.

9. The method of claim 1 wherein the donor substrate is selected from Si, SiGe, SiGe alloys, SiC, Group II/VI, and Group III/V compounds.

10. The method of claim 1 further comprising removing the thickness of material entirely from the donor substrate using a propagating cleave front.

11. The method of claim 1 wherein the suitable deflection characteristic is a second deflection characteristic, the second defection characteristic being less than the first deflection characteristic.

12. The method of claim 1 wherein the backing substrate comprises an electrostatic chuck.

13. The method of claim 1 wherein the backing substrate comprises a vacuum chuck.

14. The method of claim 1 wherein the backing substrate is characterized by a third deflection characteristic, the third deflection characteristic being less than the first deflection characteristic, the third deflection characteristic causing the suitable deflection characteristic, the suitable deflection characteristic being less in magnitude than the first deflection characteristic.

15. The method of claim 1 wherein the handle substrate is quartz or glass, the quartz or glass having a thickness of about 1 millimeter and less.

16. The method of claim 1 wherein the donor substrate comprises a silicon bearing material, the thickness of material being substantially single crystal silicon.

17. The method of claim 1 wherein the controlled cleaving process provides a propagating cleave front within the portion of the cleave region.

18. The method of claim 1 wherein the backing substrate is maintained on the handle substrate during the cleaving process.

19. A method for manufacturing one or more devices on multi-layered substrates, the method comprising:

providing a transparent handle substrate, the transparent handle substrate having a first deflection characteristic, the transparent handle substrate having a backside and a face, the transparent handle substrate having a thickness of between about 10 millimeters and 800 microns and being selected from the group comprising quartz, glass, plastic, a polymer, a ceramic, a composite, or a metal bearing material;

determining a desired thickness of a backing substrate such that the backing substrate being adequate to cause the first deflection characteristic of the transparent handle substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for a thickness of material to be transferred onto the face of the transparent handle substrate;

coupling the backing substrate having the desired thickness to the backside of the transparent handle substrate to form a multilayered structure;

providing a donor substrate comprising a cleave region, the thickness of material, and a surface region, the cleave region being within the donor substrate to define the thickness of material, the thickness of material being provided between the cleave region and the surface region;

bonding the surface region of the donor substrate to the face of the transparent handle substrate, while the backing substrate remains attached with the transparent handle substrate to maintain at least the deflection characteristic;

initiating a cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region; and

removing the thickness of material from the donor substrate.

20. The method of claim 19 wherein the transparent handle substrate has a Young'"'"'s modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal.

21. The method of claim 19 wherein the transparent handle substrate comprises synthetic quartz of a thickness of about 800 microns.

22. A method for manufacturing one or more devices on multi-layered substrates, the method comprising:

providing a transparent handle substrate comprising quartz, glass, or a polymer of a thickness of between about 10 millimeters and 800 microns and having a first deflection characteristic, the transparent handle substrate having a backside and a face;

determining a desired thickness of a backing substrate such that the backing substrate being adequate to cause the first deflection characteristic of the transparent handle substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for a thickness of material to be transferred onto the face of the transparent handle substrate;

coupling the backing substrate having the desired thickness to the backside of the transparent handle substrate to form a multilayered structure;

bonding the surface region of the donor substrate to the face of the transparent handle substrate, while the backing substrate remains attached with the transparent handle substrate to maintain at least the deflection characteristic;

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region; and

removing the thickness of material from the donor substrate.

23. The method of claim 22 wherein the transparent handle substrate has a Young'"'"'s modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal.

24. The method of claim 22 wherein the transparent handle substrate comprises synthetic quartz of a thickness of about 800 microns.

25. A method for manufacturing one or more devices on multi-layered substrates, the method comprising:

providing a transparent handle substrate comprising quartz, glass, or a polymer of a thickness of between about 10 millimeters and 800 microns and having a first deflection characteristic, the transparent handle substrate having a backside and a face;

determining a desired thickness of a backing substrate such that the backing substrate being adequate to cause the first deflection characteristic of the transparent handle substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for a thickness of material to be transferred onto the face of the transparent handle substrate;

coupling the backing substrate having the desired thickness to the backside of the transparent handle substrate to form a multilayered structure;

providing a donor substrate selected from the group comprising single crystal silicon, SiGe, SiGe alloys, SiC, Group II/VI, and Group III/V compound, the donor substrate comprising a cleave region, the thickness of material, and a surface region, the cleave region being within the donor substrate to define the thickness of material, the thickness of material being provided between the cleave region and the surface region;

bonding the surface region of the donor substrate to the face of the transparent handle substrate, while the backing substrate remains attached with the transparent handle substrate to maintain at least the deflection characteristic;

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region; and

removing the thickness of material from the donor substrate.

26. The method of claim 25 wherein the backing substrate comprises a vacuum chuck or an electrostatic chuck.

27. The method of claim 25 wherein the transparent handle substrate is quartz or glass, the quartz or glass having a thickness of about 1 millimeter and less.

28. The method of claim 25 wherein the controlled cleaving process provides a propagating cleave front within the portion of the cleave region.

29. The method of claim 25 wherein the transparent handle substrate has a Young'"'"'s modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal.

30. The method of claim 25 wherein the transparent handle substrate comprises synthetic quartz of a thickness of about 800 microns.

31. A method for manufacturing one or more devices on multi-layered substrates, the method comprising:

providing a transparent handle substrate comprising quartz, glass, or a plastic material of a thickness of between about 10 millimeters and 800 microns and having a first deflection characteristic, the transparent handle substrate having a backside and a face;

determining a desired thickness of a backing substrate such that the backing substrate being adequate to cause the first deflection characteristic of the transparent handle substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for a thickness of material to be transferred onto the face of the transparent handle substrate;

coupling the backing substrate having the desired thickness to the backside of the transparent handle substrate to form a multilayered structure;

providing a donor substrate comprising a cleave region, the thickness of material, and a surface region, the cleave region being within the donor substrate to define the thickness of material, the thickness of material being provided between the cleave region and the surface region;

bonding the surface region of the donor substrate to the face of the transparent handle substrate, while the backing substrate remains attached with the transparent handle substrate to maintain at least the deflection characteristic;

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region;

removing the thickness of material from the donor substrate; and

forming one or more devices on a portion of the thickness of material.

32. The method of claim 31 further comprising removing the backing substrate from the handle substrate to form a resulting multilayered substrate comprising the transparent handle substrate and the thickness of material.

33. The method of claim 31 wherein the transparent handle substrate is selected from a material consisting of a plastic, a polymer, a ceramic, or a composite.

34. The method of claim 31 wherein the transparent handle substrate comprises a metal bearing material.

35. The method of claim 31 wherein the coupling between the backing substrate and the transparent handle substrate is provided using a bonding process.

36. The method of claim 31 wherein the donor substrate comprises a backing member coupled to a backside of the donor substrate, the backing member providing rigidity to the donor substrate.

37. The method of claim 31 wherein the coupling between the backing substrate and the transparent handle substrate is provided using a bonding process, the bonding process being selected from covalent bonding, anodic bonding, chemical bonding, electrostatic bonding, and plasma-activated bonding.

38. The method of claim 31 wherein the transparent handle substrate and the backing substrate comprises a releasable adhesive there between.

39. The method of claim 31 wherein the first deflection characteristic causes the thickness of material to be transferred to the transparent handle substrate using the controlled cleaving process with a surface roughness less than 50 Angstroms.

40. The method of claim 31 wherein the first deflection characteristic causes the thickness of material to be transferred to the transparent handle substrate using the controlled cleaving process with a surface roughness of less than 100 Angstroms.

41. The method of claim 31 wherein the first deflection characteristic causes the thickness of material to be transferred to the transparent handle substrate using the controlled cleaving process with a surface roughness of less than 200 Angstroms.

42. The method of claim 31 wherein the material is selected from Si, SiGe, SiGe alloys, SiC, Group II/VI, and Group III/V compounds.

43. The method of claim 31 further comprising removing the thickness of material entirely from the donor substrate using a propagating cleave front.

44. The method of claim 31 wherein the suitable deflection characteristic is a second deflection characteristic, the second defection characteristic being less than the first deflection characteristic.

45. The method of claim 31 wherein the backing substrate is selected from the group comprising an electrostatic chuck or a vacuum chuck.

46. The method of claim 31 wherein the backing substrate is characterized by a third deflection characteristic, the third deflection characteristic being less than the first deflection characteristic, the third deflection characteristic causing the suitable deflection characteristic, the suitable deflection characteristic being less in magnitude than the first deflection characteristic.

47. The method of claim 31 wherein the donor substrate comprises a silicon bearing material, the thickness of material being substantially single crystal silicon.

48. The method of claim 31 wherein the backing substrate is maintained on the transparent handle substrate.

49. The method of claim 31 wherein the transparent handle substrate has a Young'"'"'s modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal.

50. The method of claim 31 wherein the transparent handle substrate comprises synthetic quartz of a thickness of about 800 microns.