Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications
First Claim
1. A method of fabricating highly conductive regions in semiconductor substrates for radio frequency applications, comprising:
- creating a moat on a surface of a Si (silicon) substrate using standard lithography techniques, followed by an anisotropic wet etching; and
depositing a multilayer metallic thin film into the moat;
wherein the moat separates a noisy circuit area on the Si substrate from a noise sensitive circuit area on the Si substrate; and
wherein the moat is comprised of one or more V-grooves created along a [110] direction on an (001) surface of the Si substrate.
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Abstract
Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that allows for the subsequent formation of metallized posts and metallized moats in the porous regions; and (2) a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats.
43 Citations
13 Claims
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1. A method of fabricating highly conductive regions in semiconductor substrates for radio frequency applications, comprising:
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creating a moat on a surface of a Si (silicon) substrate using standard lithography techniques, followed by an anisotropic wet etching; and depositing a multilayer metallic thin film into the moat; wherein the moat separates a noisy circuit area on the Si substrate from a noise sensitive circuit area on the Si substrate; and wherein the moat is comprised of one or more V-grooves created along a [110] direction on an (001) surface of the Si substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating highly conductive regions in semiconductor substrates for radio frequency applications, comprising:
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creating a moat on a surface of a Si (silicon) substrate using standard lithography techniques, followed by an anisotropic wet etching; and depositing a multilayer metallic thin film into the moat; wherein the moat separates a noisy circuit area on the Si substrate from a noise sensitive circuit area on the Si substrate; wherein the moat is comprised of one or more trenches; wherein the multilayer metallic thin film comprises Cu (copper); and wherein the trench is plated with a layer of Cu and then filled with molten solder. - View Dependent Claims (11, 12)
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13. A method of fabricating highly conductive regions in semiconductor substrates for radio frequency applications, comprising:
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creating a moat on a surface of a Si (silicon) substrate using standard lithography techniques, followed by an anisotropic wet etching; and depositing a multilayer metallic thin film into the moat; wherein the moat separates a noisy circuit area on the Si substrate from a noise sensitive circuit area on the Si substrate; and wherein the multilayer metallic thin film is a trilayer of Cr/Cu/Au (chromium/copper/gold) or Ti/Ni/Pd (titanium/nickel/palladium).
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Specification