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GaN-series light emitting diode with high light efficiency

  • US 7,772,607 B2
  • Filed: 12/29/2006
  • Issued: 08/10/2010
  • Est. Priority Date: 09/27/2004
  • Status: Active Grant
First Claim
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1. A GaN-series light emitting diode having a high light efficiency, comprising:

  • a substrate;

    a semiconductor layer formed on said substrate and including an n-type semiconductor layer;

    a p-type semiconductor layer;

    a light emitting layer sandwiched between said n-type semiconductor layer and said p-type semiconductor layer;

    a reflection layer located between said light emitting layer and said n-type semiconductor layer, said reflection layer having one side thereof in contiguous contact with said light emitting layer and opposing side in contiguous contact with said n-type semiconductor layer;

    wherein said p-type semiconductor layer includes a p-type cladding layer, a p-type transition layer, and a p-type ohmic contact layer sequentially formed on said light emitting layer, said p-type semiconductor layer having a predetermined profile of dopant concentration extending therethrough, wherein a first concentration of dopants in said p-type cladding layer is higher than a second concentration of dopants in said p-type transition layer, and wherein a concentration of dopants in said p-type ohmic contact layer falls between said first and second concentrations of dopants; and

    wherein said p-type semiconductor layer has a textured surface formed during epitaxial growth of said p-type semiconductor layer as the result of a strain created in said p-type cladding layer and controlled by forming said predetermined profile of said dopants concentration, said textured surface being substantially void of hexagonally shaped defects.

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