Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate;
a first element isolation structure including a first trench formed in the semiconductor substrate, and first insulator formed in the first trench;
a second element isolation structure including a second trench formed in the semiconductor substrate, a second insulator formed in the second trench, and a cell plate electrode formed in the second trench and over the second insulator;
a first impurity layer formed under the first element isolation structure in the semiconductor substrate;
a second impurity layer formed under the second element isolation structure in the semiconductor substrate;
a third impurity layer formed at a surface of the semiconductor substrate; and
a fourth impurity layer formed under the second element isolation structure in the semiconductor substrate, and over the second impurity layer, andwherein an upper surface of the second insulator is positioned lower than an upper surface of the first insulator.
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Abstract
A channel stop region is formed immediately under an STI, and thereafter, an ion implantation is performed with conditions in which an impurity is doped into an upper layer portion of an active region, and at the same time, the impurity is also doped into immediately under another STI, and a channel dose region is formed at the upper layer portion of the active region, and another channel stop region is formed immediately under the STI.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a first element isolation structure including a first trench formed in the semiconductor substrate, and first insulator formed in the first trench; a second element isolation structure including a second trench formed in the semiconductor substrate, a second insulator formed in the second trench, and a cell plate electrode formed in the second trench and over the second insulator; a first impurity layer formed under the first element isolation structure in the semiconductor substrate; a second impurity layer formed under the second element isolation structure in the semiconductor substrate; a third impurity layer formed at a surface of the semiconductor substrate; and a fourth impurity layer formed under the second element isolation structure in the semiconductor substrate, and over the second impurity layer, and wherein an upper surface of the second insulator is positioned lower than an upper surface of the first insulator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification