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Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme

  • US 7,773,138 B2
  • Filed: 09/12/2007
  • Issued: 08/10/2010
  • Est. Priority Date: 09/13/2006
  • Status: Active Grant
First Claim
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1. A color image sensor comprising:

  • a sensor circuit including an array of photodetectors arranged in rows and columns; and

    a color filter mosaic including individual filter elements that are superposed in one-to-one registry over said plurality of photodetectors, said mosaic being comprised of a first type of filter element having a first luminance transparency characteristic, a second type of filter element having a second transparency characteristic different from that of said first luminance transparency characteristic, and a third type of filter element having a third transparency characteristic different from that of said first and second luminance transparency characteristics,wherein the filter elements are arranged in repeating patterns such that;

    the first type of filter element is present over every other said photodetector in each row and column, whereby a first group of the first type of filter element forms a first diagonal line comprising only said first type of filter element, andthe second and third types of color filters are arranged in repeating patterns such that the second and third types of filter element are present over every fourth said photodetector in each row and column, whereby a second group of said second type of filter elements forms a second diagonal line comprising only said second type of filter element, and whereby a third group of said third type of filter elements forms a third diagonal line comprising only said third type of filter element,wherein the sensor circuit further comprises;

    a plurality of floating diffusions, each floating diffusion being coupled to a first photodetector by a first transfer gate, a second photodetector by a second transfer gate, a third photodetector by a third transfer gate, and a fourth photodetector by a fourth transfer gate, the first, second, third and fourth photodetectors being included in said array of photodetectors with the first and second photodetectors being disposed in a first row of the array, and the third and fourth photodetectors being disposed in a second row of the array, andmeans for simultaneously transferring both a first charge present in the first photodetector and a second charge present in the fourth photodetector to said floating diffusion during a first time period, and for simultaneously transferring both a third charge present in the second photodetector and a fourth charge present in the third photodetector to said floating diffusion during a second time period.

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