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Lithographic mask and methods for fabricating a semiconductor device

  • US 7,776,494 B2
  • Filed: 12/28/2006
  • Issued: 08/17/2010
  • Est. Priority Date: 12/28/2006
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device comprising the steps of:

  • providing a semiconductor substrate;

    depositing a material layer overlying the semiconductor substrate;

    applying a layer of photosensitive material overlying the material layer;

    positioning a lithographic mask over the layer of photosensitive material, the mask comprising an optically transparent portion, an attPSM pattern that produces a phase shift of about 180°

    , and a phase shifted optically transparent portion having a first edge and a second edge, the first edge abutting the attPSM pattern and the second edge abutting the optically transparent portion;

    exposing the layer of photosensitive material to radiation passing through the mask to form selectively exposed portions of the layer of photosensitive material;

    developing the layer of photosensitive material to form a patterned layer overlying the material layer; and

    processing the material layer using the patterned layer as a process mask.

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