Lithographic mask and methods for fabricating a semiconductor device

• US 7,776,494 B2
• Filed: 12/28/2006
• Issued: 08/17/2010
• Est. Priority Date: 12/28/2006
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Kallingal, Chidam, Chen, Norman Shaowen
• Primary Examiner(s): Huff; Mark F
• Assistant Examiner(s): Fraser; Stewart A
• Application Number:
  US11/616,860
• Publication Number:
  US 20080160422A1
• Time in Patent Office: 1,328 Days
• Field of Search: 430/5, 430311-313, 430322-324
• US Class Current: 430/5
• CPC Class Codes: G03F 1/29 Rim PSM or outrigger PSM; Preparation thereof
• CPC Class Codes: G03F 1/30 Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof

Abstract

Methods for fabricating a semiconductor device and a lithographic mask of use in that method are provided for. The lithographic mask comprises an optically transparent substrate, an attPSM pattern overlying the optically transparent substrate, and a phase shifted optically transparent portion adjacent to and aligned with an edge of the attPSM pattern.

Claims

1. A method for fabricating a semiconductor device comprising the steps of:

providing a semiconductor substrate;

depositing a material layer overlying the semiconductor substrate;

applying a layer of photosensitive material overlying the material layer;

positioning a lithographic mask over the layer of photosensitive material, the mask comprising an optically transparent portion, an attPSM pattern that produces a phase shift of about 180°

, and a phase shifted optically transparent portion having a first edge and a second edge, the first edge abutting the attPSM pattern and the second edge abutting the optically transparent portion;

exposing the layer of photosensitive material to radiation passing through the mask to form selectively exposed portions of the layer of photosensitive material;

developing the layer of photosensitive material to form a patterned layer overlying the material layer; and

processing the material layer using the patterned layer as a process mask.

2. The method of claim 1 wherein the step of positioning a lithographic mask comprises the step of positioning a lithographic mask comprising a layer of quartz, a layer of patterned absorbing phase shift material on the quartz, and a recess etched into the quartz in alignment with the layer of patterned absorbing phase shift material.

3. The method of claim 1 wherein the step of exposing comprises the step of passing radiation through a mask comprising patterned MoSi overlying a quartz substrate and further comprising optically transparent quartz portions adjacent the patterned MoSi etched to effect a 180°

phase shift in the radiation.

4. The method of claim 1 wherein the step of positioning a lithographic mask comprises the step of positioning a lithographic mask further including a binary sub resolution assist feature spaced apart from the attPSM pattern.

5. The method of claim 4 wherein the step of positioning a lithographic mask comprises the step of positioning a lithographic mask further including a binary pattern.

6. The method of claim 5 wherein the step of positioning a lithographic mask comprises the step of positioning a lithographic mask further including phase shifted optically transparent portions adjacent the binary sub resolution assist feature and the binary pattern.

7. The method of claim 1 wherein the step of depositing a material layer comprises the step of depositing a layer of polycrystalline silicon and wherein the step of processing the material layer comprises the step of etching the polycrystalline silicon layer to form a gate electrode.

8. A method for fabricating a semiconductor device comprising the steps of:

forming a layer of material overlying a semiconductor substrate;

applying a layer of photosensitive material overlying the layer of material;

directing radiation through a mask to selectively expose a first portion of the layer of photosensitive material and to leave unexposed a second portion of the layer of photosensitive material, the mask comprising an attPSM pattern bounded by a phase shifted optically transparent portion to define the second portion, the attPSM pattern producing a phase shift of about 180°

, the phase shifted optically transparent portion having a first edge adjacent to the attPSM pattern and a second edge adjacent a non-phase shifted optically transparent portion; and

developing the layer of photosensitive material to form a process mask overlying the layer of material.

9. The method of claim 8 wherein the step of directing radiation comprises the step of directing radiation through a mask comprising an attPSM pattern having a first edge and a second edge, a first phase shifted optically transparent portion adjacent the first edge and a second phase shifted optically transparent portion adjacent the second edge.

10. The method of claim 8 wherein the step of directing radiation comprises the step of directing radiation through a mask further comprising a binary sub resolution assist feature spaced apart from the attPSM pattern.

11. The method of claim 10 wherein the step of directing radiation comprises the step of directing radiation through a mask further comprising a binary pattern.

12. The method of claim 11 wherein the step of directing radiation comprises the step of directing radiation through a mask further comprising a phase shifted optically transparent portion adjacent the binary sub resolution assist feature.

13. The method of claim 8 wherein the step of forming a layer of material comprises the step of depositing a layer of gate electrode forming material.

14. A lithographic mask comprising:

an optically transparent substrate having a non-phase shifted optically transparent portion;

an attPSM pattern overlying the optically transparent substrate that produces a phase shift of about 180°

; and

a phase shifted optically transparent portion etched into the surface of the optically transparent substrate and having a first edge and a second edge, the first edge abutting and aligned with an edge of the attPSM pattern and the second edge abutting and aligned with the non-phase shifted optically transparent portion of the optically transparent substrate.

15. The lithographic mask of claim 14 wherein the optically transparent substrate comprises quartz and the phase shifted optically transparent portion comprises a recess in the optically transparent substrate.

16. The lithographic mask of claim 14 further comprising a binary sub resolution assist feature.

17. The lithographic mask of claim 16 further comprising a phase shifted optically transparent portion adjacent the binary sub resolution assist feature.

18. The lithographic mask of claim 16 further comprising a binary pattern.

19. The lithographic mask of claim 18 further comprising a phase shifted optically transparent portion adjacent the binary pattern.

20. The lithographic mask of claim 16 wherein the optically transparent substrate comprises a quartz substrate, the attPSM pattern comprises MoSi, the phase shifted optically transparent portion comprises a recess in the quartz substrate, and the binary sub resolution assist feature comprises chrome.