High resolution resists for next generation lithographies
First Claim
Patent Images
1. A polymeric resist comprising:
- an adamantyl component; and
a polymerizable cationic photoacid generator component comprising [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2CF3, [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2C4F9, or combinations thereof.
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Abstract
The present invention addresses many of the current limitations in sub-100 nm lithographic techniques by providing novel resists that achieve high sensitivity, high contrast, high resolution, and high dry-etch resistance for pattern transfer to a substrate. In one embodiment, the present invention provides a polymeric resist comprising an adamantyl component and a photoacid generating component.
50 Citations
12 Claims
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1. A polymeric resist comprising:
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an adamantyl component; and a polymerizable cationic photoacid generator component comprising [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2CF3, [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2C4F9, or combinations thereof.
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2. A polymeric resist comprising:
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an adamantyl component; and a polymerizable anionic photoacid generator component comprising [p-CH2═
CH—
C6H4SO3]S(Me2)(C6H5).
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3. A lithographic process comprising:
exposing a lithographic recording medium to radiation to form a pattern and developing the pattern, the lithographic recording medium comprising a polymeric resist comprising an adamantyl component and a polymerizable cationic photoacid generator component comprising [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2CF3, [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2C4F9, or combinations thereof.
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4. A lithographic process comprising:
exposing a lithographic recording medium to radiation to form a pattern; and
developing the pattern, the lithographic recording medium comprising a polymeric resist comprising an adamantyl component and a polymerizable anionic photoacid generator component comprising [p-CH2═
CH—
C6H4SO3]S(Me2)(C6H5).
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5. A polymeric resist comprising:
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a hydroxystyrene component; an adamantyl component; and a polymerizable cationic photoacid generator component comprising [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2CF3, [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2C4F9, or combinations thereof.
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6. A polymeric resist comprising:
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a hydroxystyrene component; an adamantyl component; and a polymerizable anionic photoacid generator component comprising [p-CH2═
CH—
C6H4SO3]S(Me2)(C6H5).
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7. A lithographic process comprising:
exposing a lithographic recording medium to radiation to form a pattern and developing the pattern, the lithographic recording medium comprising a polymeric resist comprising a hydroxystyrene component, an adamantyl component, and a polymerizable cationic photoacid generator component comprising [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2CF3, [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2C4F9, or combinations thereof.
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8. A lithographic process comprising:
exposing a lithographic recording medium to radiation to form a pattern and developing the pattern, the lithographic recording medium comprising a polymeric resist comprising a hydroxystyrene component, an adamantyl component, and a polymerizable anionic photoacid generator component comprising [p-CH2═
CH—
C6H4SO3]S(Me2)(C6H5).
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9. A method for producing a polymeric resist comprising:
incorporating a photoacid generating group in a main polymeric chain of the polymeric resist, the polymeric resist comprising a base component, and the photoacid generating group comprising a cationic photoacid generator, wherein the cationic photoacid generator comprises [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2CF3, [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2C4F9, or combinations thereof.
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10. A method for producing a polymeric resist comprising:
incorporating a photoacid generating group in a main polymeric chain of the polymeric resist, the polymeric resist comprising a base component, and the photoacid generating group comprising an anionic photoacid generator, wherein the anionic photoacid generator comprises [p-CH2═
CH—
C6H4SO3]S(Me2)(C6H5).
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11. A method for producing a polymeric resist comprising:
incorporating a photoacid generating group in a main polymeric chain of a polymeric resist wherein the photoacid generating group comprises [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2CF3, [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2C4F9, or combinations thereof.
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12. A method for producing a polymeric resist comprising:
incorporating a photoacid generating group in a main polymeric chain of a polymeric resist wherein the photoacid generating group comprises [p-CH2═
CH—
C6H4SO3]S(Me2)(C6H5).
Specification
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Current AssigneeUniversity of North Carolina At Charlotte (University of North Carolina System)
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Original AssigneeUniversity of North Carolina At Charlotte (University of North Carolina System)
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InventorsGonsalves, Kenneth E.
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Primary Examiner(s)Kelly; Cynthia H
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Assistant Examiner(s)Eoff; Anca
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Application NumberUS11/226,912Publication NumberTime in Patent Office1,798 DaysField of Search430/270.1, 430/281.1, 430/285.1, 430/286.1, 430/914, 430/921, 430/925, 430/910, 526/286, 526/287US Class Current430/270.1CPC Class CodesG03F 7/0397 the macromolecular compound...Y10S 430/115 Cationic or anionicY10S 430/122 Sulfur compound containingY10S 430/126 Halogen compound containing
