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Method of manufacturing light emitting diodes

  • US 7,776,637 B2
  • Filed: 05/25/2006
  • Issued: 08/17/2010
  • Est. Priority Date: 05/27/2005
  • Status: Active Grant
First Claim
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1. A method of manufacturing a light emitting diode, comprising:

  • forming a laser lift-off (LLO) layer comprising at least one of GaN, InGaN, AlGaN and InAlGaN on a nitride semiconductor substrate;

    forming a first semiconductor layer on the laser lift-off layer;

    forming an active layer and a second semiconductor layer on the first semiconductor layer;

    bonding a carrier to a surface of the second semiconductor layer;

    carrying out a laser lift-off process in which the laser beam is irradiated on the LLO layer through the nitride semiconductor substrate to separate the nitride semiconductor substrate;

    forming a metallic support on of the first semiconductor layer on which the nitride semiconductor substrate is separated;

    removing the carrier formed on the surface of the second semiconductor layer;

    forming a first electrode on the surface of the second semiconductor layer on which the carrier is removed; and

    forming a second electrode on the metallic support,wherein the LLO layer is completely removed by irradiating the laser beam, wherein the carrier comprises any one of a glass substrate, a sapphire substrate, a silicon substrate, a ZnO substrate, and a nitride semiconductor substrate, or a template substrate in which at least one of GaN, InGaN, AlGaN, and AlInGaN is laminated on anyone of a glass substrate, a sapphire substrate, a silicon substrate, a ZnO substrate, and a nitride semiconductor substrate.

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