Light-emitting diode arrangement comprising a color-converting material

• US 7,777,236 B2
• Filed: 08/24/2005
• Issued: 08/17/2010
• Est. Priority Date: 11/03/2004
• Status: Expired due to Fees

• Current Assignee: Tridonic Optoelectronics GmbH
• Original Assignee: Tridonic Optoelectronics GmbH
• Inventors: Pachler, Peter
• Primary Examiner(s): Tran; Long K
• Application Number:
  US11/718,596
• Publication Number:
  US 20090194776A1
• Time in Patent Office: 1,819 Days
• Field of Search: 257/13, 257/81, 257/82, 257/98, 257/918, 257/E33.061, 257/E33.073
• US Class Current: 257/81
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

With a light-emitting diode arrangement (1) having a light-emitting diode chip (2) arranged on a base (3), and colour conversion material (7) surrounding the light-emitting diode chip (2), which material is constituted to convert at least a part of the light emitted by the light-emitting diode chip (2) into light of another wavelength, the colour conversion material (7) is surrounded to the side by a reflector (8), the lateral distance (x) of the light-emitting diode chip (2) to the reflector (8) amounting to at most 0.5 mm.

Claims

1. Light-emitting diode arrangement, having:

a light-emitting diode chip arranged on a base, and colour conversion material covering on top and surrounding to the side and covering over the light-emitting diode chip, which material is constituted to convert at least a part of the light emitted by the light-emitting diode chip into light of another wavelength,

characterized in that, the colour conversion material surrounding to the side the light-emitting diode chip is surrounded to the side by a reflector, the lateral distance of the light-emitting diode chip to the reflector being between 0.1 and 0.5 mm.

2. Light-emitting diode arrangement according to claim 1, characterized in that, the distance (x) from the light-emitting diode chip (2) to the reflector (8) is in the range between 0.1 mm and 0.2 mm.

3. Light-emitting diode arrangement according to claim 1 or 2, characterized in that, the reflector (8) surrounds the colour conversion material (7) over the complete height thereof.

4. Light-emitting diode arrangement according to claim 1, characterized in that, the reflector (8) is vertically directed.

5. Light-emitting diode arrangement according to claim 1, characterized in that, the thickness (h) of the colour conversion material (7) covering the upper side of the light-emitting diode chip (2) is at least 0.05 mm.

6. Light-emitting diode arrangement according to claim 5, characterized in that, the thickness (h) of the colour conversion material (7) covering the upper side of the light-emitting diode chip (2) is at least 0.05 mm larger than the distance (x) between the light-emitting diode chip (2) and the reflector (8).

7. Light-emitting diode arrangement according to claim 5 or 6, characterized in that, the thickness (h) of the colour conversion material (7) covering the upper side of the light-emitting diode chip (2) is at most 3 mm.

8. Light-emitting diode arrangement according to claim 1, characterized by an optical system for collimating the light emitted by the light-emitting diode chip (2).

9. Light-emitting diode arrangement according to claim 8, characterized in that, the optical system is formed by a lens (9) which surrounds the light-emitting diode chip (2) and the colour conversion material (7).

10. Light-emitting diode arrangement according to claim 8, characterized in that, the optical system is formed by a lens (11), which-seen in direction of emission-is arranged in front of the light-emitting diode chip (2).

11. Light-emitting diode arrangement according to claim 10, characterized in that, the lens (11) is arranged separated from the surface of the colour conversion material (7).

12. Light-emitting diode arrangement according to claim 11, characterized in that, the lens (11) is separated from the surface of the colour conversion material (7) by an air-gap.

13. Light-emitting diode arrangement according to claim 1, characterized in that, the reflector (8) is of metal.

14. Light-emitting diode arrangement according to claim 1, characterized in that, the reflector (8) is diffusely reflectively.

15. Light-emitting diode arrangement according to claim 14, characterized in that, the reflector is of Teflon.