Conductive line comprising a capping layer
First Claim
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1. A method of forming an integrated circuit, comprising:
- forming a groove in a supporting material;
forming a titanium nitride liner layer in the groove;
forming a first compound comprising a metal on the liner layer in the groove;
removing a portion of the liner layer and the first metal compound corresponding to an upper portion of the groove, wherein the liner layer and the first metal compound remain in a lower portion of the groove;
forming a capping layer on the first metal compound in the groove, wherein the capping layer comprises a second compound of the metal, the second compound being different than the first metal compound, andremoving any residue of the titanium nitride liner layer on sidewalls of the groove in the upper portion thereof, wherein the first metal compound protected by the second metal compound during the residue removal.
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Abstract
An integrated circuit includes a conductive line, the conductive line having a conductive layer made of a metal or a first compound including a metal and a capping layer made of a second compound comprising the metal, the capping layer being in contact with the conductive layer, the first compound being different from the second compound.
8 Citations
14 Claims
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1. A method of forming an integrated circuit, comprising:
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forming a groove in a supporting material; forming a titanium nitride liner layer in the groove; forming a first compound comprising a metal on the liner layer in the groove; removing a portion of the liner layer and the first metal compound corresponding to an upper portion of the groove, wherein the liner layer and the first metal compound remain in a lower portion of the groove; forming a capping layer on the first metal compound in the groove, wherein the capping layer comprises a second compound of the metal, the second compound being different than the first metal compound, and removing any residue of the titanium nitride liner layer on sidewalls of the groove in the upper portion thereof, wherein the first metal compound protected by the second metal compound during the residue removal. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit, formed by the process of:
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forming a groove in a supporting material comprising a semiconductor body; forming a dielectric layer in the groove; forming a titanium nitride liner layer on the dielectric layer in the groove; forming a first metal compound on the liner layer in the groove; removing a portion of the liner layer and the first metal compound corresponding to an upper portion of the groove, wherein the liner layer and the first metal compound remain in a lower portion of the groove; forming a capping layer on the first metal compound in the groove, wherein the capping layer comprises a second metal compound that is different than the first metal compound; and removing any residue of the titanium nitride liner layer on sidewalls of the groove in the upper portion thereof, wherein the first metal compound is protected by the second metal compound during the residue removal. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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Specification