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Non-volatile resistance switching memories and methods of making same

  • US 7,778,063 B2
  • Filed: 11/08/2007
  • Issued: 08/17/2010
  • Est. Priority Date: 11/08/2006
  • Status: Active Grant
First Claim
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1. A resistive switching memory comprising:

  • a plurality of memory cells arranged in rows and columns, each said memory cell being a resistive switching memory cell including a resistive switching material, and each of said memory cells comprising a conductor/variable resistance material/conductor (M/VRM/M) stack formed on a channel in a semiconductor;

    a write circuit for placing selected ones of said resistive switching memory cells in a first memory cell resistive state or a second memory cell resistive state depending on information input into said memory, wherein the resistance of said material is higher in said second resistance state than in said first resistance state; and

    a read circuit for sensing the state of said memory cell and providing an electrical signal corresponding to the sensed state of said memory cell.

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