Gas delivery apparatus for atomic layer deposition
First Claim
1. A chamber for processing substrates, comprising:
- a substrate support having a substrate receiving surface;
a chamber lid comprising;
an expanding channel at a central portion of the chamber lid;
a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface;
a first conduit coupled to a first gas inlet within the expanding channel; and
a second conduit coupled to a second gas inlet within the expanding channel, wherein the first conduit and the second conduit are positioned to provide a gas flow in a circular direction through the expanding channel and across a substrate positioned on the substrate receiving surface, wherein the gas flow proceeds in a laminar manner from a center of the substrate to an outer edge of the substrate.
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Accused Products
Abstract
Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
603 Citations
62 Claims
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1. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface; a chamber lid comprising; an expanding channel at a central portion of the chamber lid; a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface; a first conduit coupled to a first gas inlet within the expanding channel; and a second conduit coupled to a second gas inlet within the expanding channel, wherein the first conduit and the second conduit are positioned to provide a gas flow in a circular direction through the expanding channel and across a substrate positioned on the substrate receiving surface, wherein the gas flow proceeds in a laminar manner from a center of the substrate to an outer edge of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface; a chamber lid comprising; an expanding channel at a central portion of the chamber lid; a first conduit coupled to a first gas inlet within the expanding channel; and a second conduit coupled to a second gas inlet within the expanding channel, wherein the first conduit and the second conduit are positioned to provide a gas flow in a circular direction; and a first valve coupled to the first conduit and a second valve coupled to the second conduit, where the first and second valves enable an atomic layer deposition process with a pulse time of about 1 second or less. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface; a chamber lid comprising; an expanding channel at a central portion of the chamber lid; and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface; a reaction zone containing a volume of about 1,000 cm3 or less is defined between the chamber lid and the substrate receiving surface; and a gas delivery system comprising; at least one gas conduit coupled to the expanding channel; at least one valve coupled to the at least one gas conduit; and at least one gas source in fluid communication to the at least one valve. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
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45. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface; a chamber lid comprising; an expanding channel at a central portion of the chamber lid; and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface; a reaction zone containing a volume of about 3,000 cm3 or less is defined between the chamber lid and the substrate receiving surface; and a gas delivery system comprising; at least one gas conduit coupled to the expanding channel; at least one valve coupled to the at least one gas conduit; and at least one gas source in fluid communication to the at least one valve. - View Dependent Claims (46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58)
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59. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface; a chamber lid comprising; an expanding channel at a central portion of the chamber lid; a first conduit coupled to a first gas inlet within the expanding channel; and a second conduit coupled to a second gas inlet within the expanding channel, wherein the first conduit and the second conduit are positioned to provide a gas flow in a circular direction; a first valve coupled to the first conduit and a second valve coupled to the second conduit, where the first and second valves enable an atomic layer deposition process with a pulse time of about 1 second or less; and a first gas source coupled to and in fluid communication to the first conduit and the first valve, and independently, a second gas source coupled to and in fluid communication to the second conduit and the second valve. - View Dependent Claims (60)
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61. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface; a chamber lid comprising; an expanding channel at a central portion of the chamber lid; a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface; a first conduit coupled to a first gas inlet within the expanding channel; a second conduit coupled to a second gas inlet within the expanding channel, wherein the first conduit and the second conduit are positioned to provide a gas flow in a circular direction through the expanding channel and across a substrate positioned on the substrate receiving surface, wherein the gas flow proceeds in a laminar manner from a center of the substrate to an outer edge of the substrate; a first valve coupled to the first conduit; and a second valve coupled to the second conduit, and the first and second valves enable an atomic layer deposition process having a pulse time of about 1 second or less. - View Dependent Claims (62)
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Specification