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Gas delivery apparatus for atomic layer deposition

  • US 7,780,788 B2
  • Filed: 03/11/2005
  • Issued: 08/24/2010
  • Est. Priority Date: 10/26/2001
  • Status: Expired due to Fees
First Claim
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1. A chamber for processing substrates, comprising:

  • a substrate support having a substrate receiving surface;

    a chamber lid comprising;

    an expanding channel at a central portion of the chamber lid;

    a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface;

    a first conduit coupled to a first gas inlet within the expanding channel; and

    a second conduit coupled to a second gas inlet within the expanding channel, wherein the first conduit and the second conduit are positioned to provide a gas flow in a circular direction through the expanding channel and across a substrate positioned on the substrate receiving surface, wherein the gas flow proceeds in a laminar manner from a center of the substrate to an outer edge of the substrate.

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