Vortex chamber lids for atomic layer deposition
First Claim
1. A chamber for processing substrates, comprising:
- a substrate support comprising a substrate receiving surface; and
a chamber lid assembly comprising;
an expanding channel extending along a central axis at a central portion of the chamber lid assembly;
a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface;
a first conduit coupled to a first gas passageway, wherein the first gas passageway surrounds the expanding channel and comprises a first plurality of inlets extending into the expanding channel; and
a second conduit coupled to a second gas passageway, wherein the second gas passageway surrounds the expanding channel and comprises a second plurality of inlets extending into the expanding channel, and the first plurality of inlets and the second plurality of inlets are positioned to provide a circular gas flow pattern through the expanding channel.
1 Assignment
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Accused Products
Abstract
Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.
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Citations
24 Claims
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1. A chamber for processing substrates, comprising:
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a substrate support comprising a substrate receiving surface; and a chamber lid assembly comprising; an expanding channel extending along a central axis at a central portion of the chamber lid assembly; a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface; a first conduit coupled to a first gas passageway, wherein the first gas passageway surrounds the expanding channel and comprises a first plurality of inlets extending into the expanding channel; and a second conduit coupled to a second gas passageway, wherein the second gas passageway surrounds the expanding channel and comprises a second plurality of inlets extending into the expanding channel, and the first plurality of inlets and the second plurality of inlets are positioned to provide a circular gas flow pattern through the expanding channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A chamber for processing substrates, comprising:
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a substrate support comprising a substrate receiving surface; and a chamber lid assembly comprising; an expanding channel extending along a central axis at a central portion of the chamber lid assembly; a first conduit coupled to a first gas passageway, wherein the first gas passageway surrounds the expanding channel and comprises a first plurality of inlets extending into the expanding channel; a second conduit coupled to a second gas passageway, wherein the second gas passageway surrounds the expanding channel and comprises a second plurality of inlets extending into the expanding channel, wherein the first gas passageway is positioned directly above the second gas passageway, and the first plurality of inlets and the second plurality of inlets are positioned to provide a circular gas flow pattern through the expanding channel; and a first valve coupled to the first conduit and a second valve coupled to the second conduit, where the first and second valves enable an atomic layer deposition process with a pulse time of about 2 seconds or less. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification