Multilayer substrate
First Claim
1. A method for forming a multilayer substrate comprising:
- obtaining a base substrate;
forming a first metallization layer on the base substrate without firing;
the first metallization layer further comprising a metal pattern formed by using a photolithography technique; and
forming a plurality of alternating dielectric layers and metallization layers over the first metallization layer;
where a layer of the plurality of dielectric layers is formed by ion beam assist deposition, and a further layer of the plurality of dielectric layers is formed by one of sputtering, vapor deposition, epitaxial deposition and evaporation.
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Accused Products
Abstract
A multilayer substrate device formed from a base substrate and alternating metalization layers and dielectric layers. Each layer is formed without firing. Vias may extend through one of the dielectric layers such that two metalization layers surrounding the dielectric layers make contact with each other. The vias may be formed by placing pillars on top of a metalization layer, forming a dielectric layer on top of the metalization layer and surrounding the pillars, and removing the pillars. Dielectric layers may be followed by other dielectric layers and metalization layers may be followed by other metalization layers. Vias in the substrate may be filled by forming an assembly around the substrate, the assembly including printing sheets containing a conductive ink and pressure plates for applying pressure. A vacuum may be applied to remove air in the ink. Pressure may then be applied to the printing sheets through the pressure plates. The conductive ink in the printing sheets is pushed through the vias when pressure is applied by the pressure plates.
68 Citations
13 Claims
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1. A method for forming a multilayer substrate comprising:
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obtaining a base substrate; forming a first metallization layer on the base substrate without firing; the first metallization layer further comprising a metal pattern formed by using a photolithography technique; and forming a plurality of alternating dielectric layers and metallization layers over the first metallization layer; where a layer of the plurality of dielectric layers is formed by ion beam assist deposition, and a further layer of the plurality of dielectric layers is formed by one of sputtering, vapor deposition, epitaxial deposition and evaporation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification