Method for forming inorganic silazane-based dielectric film

• US 7,781,352 B2
• Filed: 06/06/2007
• Issued: 08/24/2010
• Est. Priority Date: 06/06/2007
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Ha, Jeongseok, Matsuki, Nobuo, Fukazawa, Atsuki
• Primary Examiner(s): EVERHART, CARIDAD
• Application Number:
  US11/759,159
• Publication Number:
  US 20080305648A1
• Time in Patent Office: 1,175 Days
• Field of Search: 438/792, 438/789, 438/793, 257/E21.489, 257/E21.487, 257/E21.477
• US Class Current: 438/792
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02326 into a nitride layer, e.g. changing SiN to SiON
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light

Abstract

A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.

Claims

1. A method of forming a dielectric film, comprising:

introducing a gas consisting of Si, H, and N or consisting of Si H, N, and C into a reaction chamber where an object is placed;

controlling a temperature of the object at −

50°

C. to 50°

C.; and

depositing by plasma reaction an inorganic silazane-based film constituted by Si, N, and H containing inorganic silazane bonds,

said method further comprising introducing into the reaction chamber an additive gas consisting of C and H or consisting of C, H, and O continuously before, simultaneously with, or continuously after the deposition of the inorganic silazane-based film on the object.

2. The method according to claim 1, wherein the additive gas is hexane or mesitylene.

3. The method according to claim 1, wherein the object is a semiconductor substrate placed on a susceptor disposed in the reaction chamber.

4. The method according to claim 3, further comprising heat-treating the substrate with the inorganic silazane-based film in a heat-treating chamber without introducing an oxygen-supplying gas into the heat-treating chamber, thereby forming a silicone nitride film from the film.

5. The method according to claim 4, wherein the substrate has an irregular surface including a concave portion.

6. The method according to claim 5, wherein the concave portion of the irregular surface has holes or grooves, and the deposition step is performed on the irregular surface to fill the holes or grooves with the inorganic silazane-based film.

7. The method according to claim 5, further comprising heat-treating the substrate with the inorganic silazane-based film in a heat-treating chamber while introducing an oxygen-supplying gas into the heat-treating chamber to replace N with O in the film, thereby converting the film to an oxide film.

8. The method according to claim 7, wherein the oxygen-supplying gas is O2, CO2, and/or N2O.

9. The method according to claim 7, wherein the heat-treatment step is performed by UV curing.

10. The method according to claim 7, wherein the heat-treatment step is performed by thermal annealing at a temperature of 450°

C. or higher.

11. A method for forming an interconnect structure, comprising the steps of:

forming a three-dimensional structure for interconnect in a substrate; and

forming an insulation layer on a surface of the three-dimensional structure using a method comprising;

introducing a gas consisting of Si, H, and N or consisting of Si H, N, and C into a reaction chamber where an object is placed, wherein in the gas introducing step, no oxygen-supplying gas is introduced into the reaction chamber;

controlling a temperature of the object at −

50°

C. to 50°

C.; and

depositing by plasma reaction an inorganic silazane-based film constituted by Si, N, and H containing inorganic silazane bonds.

12. The method according to claim 11, further comprising wet-etching the insulation film.

13. The method according to claim 12, wherein the step of forming a three-dimensional structure comprises forming a layer of aluminum, tungsten, or tungsten silicon as a wiring layer and etching the layer in a pattern.

14. A method of forming a dielectric film, comprising the steps of:

introducing a gas constituted by Si H, N and optionally C into a reaction chamber where an object is placed;

controlling a temperature of the object at −

50°

C. to 50°

C.;

depositing by plasma reaction an inorganic silazane-based film constituted by Si, N, and H containing inorganic silazane bonds; and

adding fluidity to the inorganic silazane-based film so as to be flowable on the object, by using a hydrocarbon gas.