Semiconductor device
First Claim
1. A semiconductor device comprising:
- a field effect transistor having a channel region formed in a single crystal semiconductor substrate;
a memory circuit provided above the field effect transistor, wherein the memory circuit includes an organic memory element comprising;
a first conductive layer electrically connected to the field effect transistor,an insulating layer provided so as to cover an edge portion of the first conductive layer,an organic compound layer provided over the first conductive layer and the insulating layer, anda second conductive layer provided over the organic compound layer; and
a third conductive layer serving as an antenna,wherein the third conductive layer serving as the antenna and the first conductive layer are provided in a same layer.
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Accused Products
Abstract
It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a field effect transistor having a channel region formed in a single crystal semiconductor substrate; a memory circuit provided above the field effect transistor, wherein the memory circuit includes an organic memory element comprising; a first conductive layer electrically connected to the field effect transistor, an insulating layer provided so as to cover an edge portion of the first conductive layer, an organic compound layer provided over the first conductive layer and the insulating layer, and a second conductive layer provided over the organic compound layer; and a third conductive layer serving as an antenna, wherein the third conductive layer serving as the antenna and the first conductive layer are provided in a same layer. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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2. A semiconductor device comprising:
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a first field effect transistor and a second field effect transistor each having a channel region formed in a single crystal semiconductor substrate; a memory circuit provided above the first field effect transistor and the second field effect transistor, wherein the memory circuit includes an organic memory element comprising; a first conductive layer electrically connected to the first field effect transistor, an insulating layer provided so as to cover an edge portion of the first conductive layer, an organic compound layer provided over the first conductive layer and the insulating layer, and a second conductive layer provided over the organic compound layer; and a third conductive layer serving as an antenna, which is provided above the memory circuit, wherein the third conductive layer serving as the antenna is electrically connected to the second field effect transistor. - View Dependent Claims (5)
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3. A semiconductor device comprising:
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a field effect transistor having a channel region formed in a single crystal semiconductor substrate; a memory circuit provided above the field effect transistor, wherein the memory circuit includes an organic memory element comprising; a first conductive layer electrically connected to the field effect transistor, an insulating layer provided so as to cover an edge portion of the first conductive layer, an organic compound layer provided so as to cover the first conductive layer which is not covered with the insulating layer and an edge portion of the insulating layer, and a second conductive layer provided so as to cover the organic compound layer and the insulating layer which is not covered with the organic compound layer; and a third conductive layer serving as an antenna, wherein the third conductive layer serving as the antenna and the first conductive layer are provided in a same layer.
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4. A semiconductor device comprising:
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a first field effect transistor and a second field effect transistor each having a channel region formed in a single crystal semiconductor substrate; a memory circuit provided above the first field effect transistor and the second field effect transistor, wherein the memory circuit includes an organic memory element comprising; a first conductive layer electrically connected to the first field effect transistor, an insulating layer provided so as to cover an edge portion of the first conductive layer; an organic compound layer provided so as to cover the first conductive layer which is not covered with the insulating layer and an edge portion of the insulating layer; and a second conductive layer provided so as to cover the organic compound layer and the insulating layer which is not covered with the organic compound layer; and a third conductive layer serving as an antenna, which is provided above the memory circuit, wherein the third conductive layer serving as the antenna is electrically connected to the second field effect transistor.
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Specification