Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same

• US 7,781,790 B2
• Filed: 12/20/2007
• Issued: 08/24/2010
• Est. Priority Date: 12/21/2006
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Narita, Junya, Narukawa, Yukio, Minato, Shunsuke, Wakai, Yohei, Yamada, Motokazu
• Primary Examiner(s): LOUIE, WAI SING
• Application Number:
  US12/004,079
• Publication Number:
  US 20080303042A1
• Time in Patent Office: 978 Days
• Field of Search: 257/88, 257/95, 257/98
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01063 Europium [Eu]
• CPC Class Codes: H01L 2924/01077 Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A semiconductor light emitting element having a semiconductor light emitting structure on a first main surface of a substrate, wherein the first main surface of the substrate has a substrate protrusion portion thereon, wherein a bottom surface of a protrusion is wider than a top surface thereof in a cross section of the substrate and the top surface is included in the bottom surface in a top view of the substrate, the bottom surface has an approximately polygonal shape which has a convex portion on each constituent side of the bottom surface, and the top surface has an approximately circular shape.

Claims

1. A semiconductor light emitting element comprising a semiconductor light emitting structure on a first main surface of a substrate, wherein

the first main surface of the substrate has a substrate protrusion portion thereon, wherein a bottom surface of a protrusion is wider than a top surface thereof in a cross section of the substrate and the top surface is included in the bottom surface in a top view of the substrate,

the bottom surface has an approximately polygonal shape which has a convex portion on each constituent side of the bottom surface, and

the top surface has an approximately circular shape.

2. The semiconductor light emitting element according to claim 1, wherein a plurality of protrusions are present, are spaced apart from each other and are arranged periodically on the first main surface.

3. The semiconductor light emitting element according to claim 2, wherein the periodic arrangement of the protrusions is a triangular, quadrangular, or hexagonal lattice.

5. The semiconductor light emitting element according to claim 1, wherein the shape of the bottom surface is approximately triangular.

6. The semiconductor light emitting element according to claim 5, wherein a plurality of protrusions are present and are arranged in an aligning structure having the protrusions arranged in two directions, such that a direction of the aligned constituent sides of the bottom triangular surfaces of the protrusions intersects with a direction of the vertexes of the triangular bottom surfaces, and wherein the direction of the vertexes are approximately parallel to that of the aligning structure.

7. The light emitting element according to claim 6, wherein a row of aligned protrusions having a width defined by a distance between two vertexes of each protrusion overlaps with an adjacent row having a width defined by a distance between two vertexes of each protrusion in the aligning structure.

4. A semiconductor light emitting element comprising a semiconductor light emitting structure on a first main surface of a substrate, wherein

the first main surface of the substrate has a substrate protrusion portion thereon, wherein a bottom surface of a protrusion is wider than a top surface thereof in a cross section of the substrate and the top surface is included in the bottom surface in a top view of the substrate, the bottom surface has an approximately polygonal shape, and

the top surface has an approximately polygonal shape which has a number of constituent sides the same or less than that of constituent sides of the bottom surface and has a different contour from that of the bottom surface, and wherein the number of side surfaces of the protrusion is larger than the number of constituent sides of the approximately polygonal bottom surface.

8. A semiconductor light emitting element comprising a semiconductor light emitting structure on a first main surface of a substrate, wherein

the first main surface of the substrate has a substrate protrusion portion on the first main surface of the substrate, a bottom surface of the protrusion is wider than a top surface thereof in a cross section of the substrate, and the top surface is included in the bottom surface in a top view of the substrate, wherein the shape of the bottom surface is approximately Reuleaux polygon.

9. The semiconductor light emitting element according to claim 8, wherein the protrusion has an upper surface having a shape of approximately a curve of constant width, a circle, or a Reuleaux polygon, which is a different shape than the shape of the bottom surface.

10. The semiconductor light emitting element according to claim 9, wherein the top surface has a longer convex portion corresponding to a side of the bottom surface, a shorter convex portion which corresponds to a corner of the bottom surface, and a shorter length than a length of the longer portion.

11. The semiconductor light emitting element according to claim 10, wherein the longer convex portion has a curvature radius smaller than that of the side of the bottom surface corresponding to the longer convex portion.

12. A semiconductor light emitting element comprising a semiconductor light emitting structure on a first main surface of a substrate, wherein

the first main surface of the substrate has a substrate protrusion portion, a bottom surface of a protrusion is wider than a top surface thereof in a cross section of the substrate, the top surface is included in the bottom surface in a top view of the substrate, the bottom surface has vertexes of a polygonal crystal shape on the substrate and a convex portion projected outwardly on each side of the polygonal crystal shape, wherein the top surface has a different contour from that of the bottom surface.

13. The semiconductor light emitting element according to claim 12, wherein the bottom surface has two constituent sides provided on each side of the polygonal crystal shape.

14. The semiconductor light emitting element according to claim 13, wherein each side surface of the protrusion has a convex portion projected outwardly on each side of the polygonal crystal shape.

15. The semiconductor light emitting element according to claim 14, wherein the protrusion has an upper surface having a shape of approximately a curve of constant width, a circle, or a Reuleaux polygon.