Semiconductor device with a vertical MOSFET including a superlattice and related methods
First Claim
1. A semiconductor device comprising:
- a substrate; and
at least one vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) on said substrate and comprisingat least one superlattice comprising a plurality of laterally stacked groups of layers transverse to said substrate,a gate laterally adjacent said at least one superlattice, andregions vertically above and below said at least one superlattice and cooperating with said gate for causing transport of charge carriers through said at least one superlattice in the vertical direction,each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, wherein at least some atoms from opposing base semiconductor portions are chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer.
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Accused Products
Abstract
A semiconductor device may include at least one vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) on a substrate. The vertical MOSFET may include at least one superlattice including a plurality of laterally stacked groups of layers transverse to the substrate. The vertical MOSFET(s) may further include a gate laterally adjacent the superlattice, and regions vertically above and below the superlattice and cooperating with the gate for causing transport of charge carriers through the superlattice in the vertical direction. Each group of layers of the superlattice may include stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. At least some atoms from opposing base semiconductor portions may be chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer.
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Citations
26 Claims
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1. A semiconductor device comprising:
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a substrate; and at least one vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) on said substrate and comprising at least one superlattice comprising a plurality of laterally stacked groups of layers transverse to said substrate, a gate laterally adjacent said at least one superlattice, and regions vertically above and below said at least one superlattice and cooperating with said gate for causing transport of charge carriers through said at least one superlattice in the vertical direction, each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, wherein at least some atoms from opposing base semiconductor portions are chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a substrate; and at least one vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) on said substrate and comprising a pair of spaced-apart superlattices each comprising a plurality of laterally stacked groups of layers transverse to said substrate, and a semiconductor fin between said superlattices, a gate at least partially surrounding said at least one superlattice, and regions vertically above and below said at least one superlattice and cooperating with said gate for causing transport of charge carriers through said at least one superlattice in the vertical direction, each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, wherein at least some atoms from opposing base semiconductor portions are chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer. - View Dependent Claims (16, 17, 18, 19)
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20. A method for making a semiconductor device comprising:
forming at least one vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) on a substrate by at least forming at least one superlattice comprising a plurality of laterally stacked groups of layers transverse to the substrate, forming a gate laterally adjacent the at least one superlattice, and forming regions vertically above and below the at least one superlattice and cooperating with the gate for causing transport of charge carriers through the at least one superlattice in the vertical direction, each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, wherein at least some atoms from opposing base semiconductor portions are chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer. - View Dependent Claims (21, 22, 23, 24, 25, 26)
Specification