Electronic chip contact structure

• US 7,781,886 B2
• Filed: 01/10/2006
• Issued: 08/24/2010
• Est. Priority Date: 06/14/2005
• Status: Active Grant

• Current Assignee: Intellectual Ventures Assets 185 LLC (Intellectual Ventures LLC)
• Original Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Inventors: Trezza, John, Dudoff, Gregory, Callahan, John
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US11/329,885
• Publication Number:
  US 20060278981A1
• Time in Patent Office: 1,687 Days
• Field of Search: 257/723, 257/736, 257/777, 257/781, 257/784, 257/786, 257/E23.011, 257/E25.013
• US Class Current: 257/723
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/05026 the internal layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/0615 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13609 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/24226 : the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/75305 : comprising protrusions
• CPC Class Codes: H01L 2224/75315 : Elastomer inlay
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06593 : Mounting aids permanently on device; arrangements for alignment
• CPC Class Codes: H01L 23/48 : Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A chip contact functionally having an IC pad, a barrier layer over the IC pad, and a malleable material over the barrier layer. An alternative chip contact functionally having an IC pad, a barrier layer over the IC pad, and a rigid material over the barrier layer.

Claims

1. A chip contact, comprising:

an integrated circuit (IC) pad;

a barrier layer over the IC pad; and

a malleable material over the barrier layer;

wherein the malleable material is configured to deform under a pressure when the chip contact is being joined with another contact.

2. The chip contact of claim 1, further comprising a standoff over the barrier layer.

3. The chip contact of claim 1, further comprising a standoff under the barrier layer.

4. The chip contact of claim 1, further comprising an adhesion layer over the malleable material.

5. The chip contact of claim 4, further comprising an oxidation barrier over the adhesion layer.

6. The chip contact of claim 1, further comprising an oxidation barrier over the malleable material.

7. The chip contact of claim 1, wherein the barrier layer comprises one or more of Ni, Cr, Ti/Pt, Ti/Pd/Pt, Ti/Pt/Au, Ti/Pd, Ti/Pd/Au, Ti/Pd/Pt/Au, TiW, Ta, TaN, Ti, TaW, W, or an alloy thereof.

8. The chip contact of claim 1, wherein the standoff comprises one or more of Ni, Cu, Al, Au, W, Pt, Pd, Co, Cr, or an alloy thereof.

9. The chip contact of claim 1, wherein the malleable material comprises one or more of Sn, In, Pb, Bi, Al, Zn, Mg, or an alloy thereof.

10. The chip contact of claim 1, further comprising an adhesion layer comprising one of Sn, In, Pb, Zn, or an alloy thereof.

11. The chip contact of claim 1, wherein the standoff comprises a sputterable metal having a melting temperature at least 50 degrees Celsius higher than a melting point of the malleable material.

12. The chip contact of claim 1, wherein the malleable material comprises a metal or an alloy with a melting point of less than 1000 degrees Celsius.

13. The chip contact of claim 1, further comprising a metal or alloy that will turn into a liquid at a tack temperature for the chip contact.

15. The electrical connection of claim 11, further comprising a cap over the diffusion barrier, wherein the malleable material also interdiffuses with the cap.

16. The electrical connection of claim 15, wherein the diffusion barrier comprises one of Ni, Cr, Ti/Pt, Ti/Pd/Pt, Ti/Pt/Au, Ti/Pd, Ti/Pd/Au, Ti/Pd/Pt/Au, TiW, Ta, TaN, Ti, TaW, W, or an alloy thereof.

17. The electrical connection of claim 15, wherein the cap is an anti-oxidation cap.

14. An electrical connection, comprising:

an integrated circuit (IC) pad;

a barrier layer over the IC pad;

a rigid material over the barrier layer;

a diffusion barrier over the rigid material; and

a deformed malleable material conforming to an end portion of the rigid material;

wherein the malleable material is configured to deform when the rigid material is coupled to the malleable material; and

wherein the malleable material interdiffuses with the diffusion barrier.

18. The electrical connection of claim 14, wherein the barrier layer comprises one or more of Ni, Cr, Ti/Pt, Ti/Pd/Pt, Ti/Pt/Au, Ti/Pd, Ti/Pd/Au, Ti/Pd/Pt/Au, TiW, Ta, TaN, Ti, TaW, W, or an alloy thereof.

19. The electrical connection of claim 14, wherein the rigid material comprises one of Al, Au, Co, Cr, Cu, Ni, Pd, Pt, Ta, W, or an alloy thereof.

20. The electrical connection of claim 14, wherein the rigid material comprises one of TaN, TaW, Ti/Pd, Ti/Pd/Pt, Ti/Pd/Pt/Au, Ti/Pt/At, Ti/Pt, Ti/Pt/Au, or TiW.

21. A system, comprising:

a first integrated circuit (IC) chip; and

a second IC chip electrically coupled to the first IC chip through an electrical connection;

wherein the electrical connection comprises;

an IC pad disposed on one of the first or the second IC chip;

a barrier layer over the IC pad;

a rigid material over the barrier layer;

a diffusion barrier over the rigid material; and

a deformed malleable material conforming to an end portion of the rigid material;

wherein the malleable material is configured to deform when the rigid material is joined with the malleable material; and

wherein the malleable material interdiffuses with the diffusion barrier.

22. The system of claim 21, wherein the electrical connection further comprises a cap over the diffusion barrier, and wherein the malleable material also interdiffuses with the cap.

23. The system of claim 21, wherein the electrical connection further comprises an adhesion layer over at least a portion of the malleable material.

24. The system of claim 21, wherein the cap comprises an oxidation barrier.