MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture
First Claim
Patent Images
1. A magnetic random access memory structure, comprising:
- an anti-ferromagnetic layer structure;
a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure; and
a ferromagnetic free layer structure physically coupled and adjacent to the crystalline ferromagnetic structure.
3 Assignments
0 Petitions
Accused Products
Abstract
A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.
-
Citations
14 Claims
-
1. A magnetic random access memory structure, comprising:
-
an anti-ferromagnetic layer structure; a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure; and a ferromagnetic free layer structure physically coupled and adjacent to the crystalline ferromagnetic structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A magnetic random access memory structure, comprising:
-
an anti-ferromagnetic layer structure; a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure; a ferromagnetic free layer structure physically coupled and adjacent to the crystalline ferromagnetic structure; a non-magnetic barrier layer physically coupled to the ferromagnetic free layer structure; and a magnetic reference layer structure physically coupled to the non-magnetic barrier layer, wherein the ferromagnetic free layer structure and the crystalline ferromagnetic structure are substantially matched to one another with regard to their crystal structure.
-
Specification