Chip-based thermo-stack

• US 7,785,931 B2
• Filed: 06/12/2009
• Issued: 08/31/2010
• Est. Priority Date: 06/14/2005
• Status: Active Grant

• Current Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Original Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Inventors: Trezza, John
• Primary Examiner(s): Zarneke; David A
• Assistant Examiner(s): Wagner; Jenny L
• Application Number:
  US12/483,609
• Publication Number:
  US 20090269888A1
• Time in Patent Office: 445 Days
• Field of Search: 438/122, 438/109, 257/714, 257/E23.011, 257/E23.088
• US Class Current: 438/122
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/05026 the internal layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/0615 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/11462 Electroplating
• CPC Class Codes: H01L 2224/11464 Electroless plating
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/11902 Multiple masking steps
• CPC Class Codes: H01L 2224/1308 : being stacked
• CPC Class Codes: H01L 2224/13082 : Two-layer arrangements
• CPC Class Codes: H01L 2224/13083 : Three-layer arrangements
• CPC Class Codes: H01L 2224/13084 : Four-layer arrangements
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/13184 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/13609 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/16058 : being non uniform along the bump connector
• CPC Class Codes: H01L 2224/16146 : the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16237 : the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/45111 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/81136 : involving guiding structures, e.g. spacers or supporting members
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81208 : applying unidirectional static pressure
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A chip unit has a stack of at least two electronic chips stacked one on top of the other, a through-chip connection within the stack, the through-chip connection including a bounding material having an inner and outer perimeter, the inner perimeter defining an interior volume longitudinally extending through at least one of the at least two chips and at least partially into another of the at least two chips so as to form a tube extending between the one and the other of the chips, and an amount of working fluid hermetically sealed within the tube, the working fluid having a volume and being at a pressure such that the working fluid and tube will operate as a heat pipe and transfer heat from the stack of chips to the working fluid.

Claims

1. A method comprising:

forming a trench through at least a portion of a first electronic chip and a portion of a second electronic chip; and

sealing a fluid in the trench to form a tube between the first electronic chip and the second electronic chip, wherein the fluid is configured to transfer heat away from the first electronic chip and the second electronic chip.

2. The method of claim 1, further comprising coupling a portion of the tube to a cooling apparatus.

3. The method of claim 2, wherein the cooling apparatus is a heat sink.

4. The method of claim 3, wherein the heat sink comprises a thermally-conductive fin or plate.

5. The method of claim 1, further comprising sealing an end of the tube to a doped semiconductor material or to a substrate of the first or second electronic chip.

6. The method of claim 1, wherein the trench is an annular trench.

7. The method of claim 1, further comprising placing the first electronic chip adjacent to the second electronic chip to form a stack.

8. The method of claim 1, wherein said sealing a fluid in the trench comprises hermetically sealing the fluid in the trench.

9. The method of claim 1, further comprising applying an insulator to a surface of the trench.

10. The method of claim 1, further comprising applying a conductive material within the trench to define an interior volume.

11. The method of claim 1, wherein said sealing a fluid in the trench comprises connecting a first conductor associated with the first electronic chip to a second conductor associated with the second electronic chip using a post-and-penetration connection.

12. The method of claim 1, wherein said sealing a fluid in the trench comprises connecting a first conductor associated with the first electronic chip to a second conductor associated with the second electronic chip using a tack-and-fuse process.

13. The method of claim 1, further comprising coupling the first electronic chip to the second electronic chip using a wafer fusion or covalent bonding process.

14. The method of claim 1, further comprising enclosing a wick within the tube.

15. The method of claim 14, wherein the wick comprises at least one of a porous structure, a sintered powder, a grooved tube, a mesh, or a carbon nanotube.

16. The method of claim 1, wherein the fluid comprises at least one of water, alcohol, acetone, or mercury.

17. A method comprising:

arranging a first electronic chip adjacent to a second electronic chip to form a stack;

forming a through-chip connection between the first electronic chip and the second electronic chip to form a tube; and

sealing a fluid within the tube, wherein the fluid is configured to transfer heat away from the first electronic chip and the second electronic chip.

18. The method of claim 17, further comprising coupling a portion of the tube to a cooling apparatus.

19. The method of claim 18, wherein the cooling apparatus is a heat sink.

20. The method of claim 19, further comprising attaching a thermally-conductive fin or plate to the heat sink.

21. The method of claim 17, wherein the through-chip connection comprises an annular trench.

22. The method of claim 17, wherein the through-chip connection comprises both an enclosure hermetically sealing the fluid and a via portion.

23. The method of claim 22, wherein the via portion is formed from a conductive post portion and a conductive malleable portion using a tack-and-fuse process.

24. The method of claim 17, further comprising coupling the first electronic chip to the second electronic chip using a wafer fusion or covalent bonding process.

25. The method of claim 17, further comprising enclosing a wick within the tube.

26. The method of claim 25, wherein the wick comprises at least one of a porous structure, a sintered powder, a grooved tube, a mesh, or a carbon nanotube.

27. The method of claim 17, wherein the fluid comprises at least one of water, alcohol, acetone, or mercury.

28. The method of claim 17, wherein the tube comprises a pre-formed heat pipe.

29. A method comprising:

arranging a first electronic chip adjacent to a second electronic chip to form a stack;

coupling the first electronic chip to the second electronic chip using a through-chip connection; and

hermetically sealing a fluid within the through-chip connection, wherein the fluid is configured to transfer heat away from the first electronic chip and the second electronic chip, and wherein the through-chip connection is configured to conduct electrical signals between the first electronic chip and the second electronic chip.

30. The method of claim 29, further comprising coupling a portion of the through-chip connection to a cooling apparatus.

31. The method of claim 30, wherein the cooling apparatus is a heat sink.

32. The method of claim 29, wherein the through-chip connection comprises an annular trench.

33. The method of claim 29, wherein the through-chip connection comprises both an enclosure hermetically sealing the fluid and a via portion.

34. The method of claim 33, wherein the via portion comprises a post-and-penetration connection formed using a tack-and-fuse process.

35. The method of claim 29, wherein the through-chip connection comprises a wick.

36. The method of claim 35, wherein the wick comprises at least one of a porous structure, a sintered powder, a grooved tube, a mesh, or a carbon nanotube.

37. The method of claim 29, wherein the fluid comprises at least one of water, alcohol, acetone, or mercury.