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Double-sided package for power module

  • US 7,786,486 B2
  • Filed: 08/02/2006
  • Issued: 08/31/2010
  • Est. Priority Date: 08/02/2005
  • Status: Expired due to Fees
First Claim
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1. An electronic semiconductor package comprising:

  • at least one electronic semiconductor device, which is manufactured from a semiconductor material consisting essentially of a wide band gap semiconductor, having first and second opposing sides, said second side of said at least one electronic, wide band gap semiconductor device having a plurality of electrical contact elements;

    a first layer having first and second opposing sides, said first layer including a first electrically insulating and thermally conductive substrate and a first predetermined electrically conductive wiring pattern affixed thereto, said first predetermined electrically conductive wiring pattern electrically mated to selected locations of said plurality of electrical contact elements on said second side of said at least one electronic semiconductor device;

    a heat removal device that includes a graphite-metal composite portion or a metal-matrix composite portion, to remove heat from the at least one electronic semiconductor device by conduction; and

    a second layer having first and second opposing sides, said second layer including a second electrically insulating and thermally conductive substrate, said first side of said second layer being thermally coupled to said heat removal device and said second side of said second layer being thermally coupled to said first side of said at least one electronic semiconductor device,wherein the graphite-metal composite portion or the metal-matrix composite portion of the heat removal device is thermally-coupled to the second electrically-insulating, thermally-conductive substrate.

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