Semiconductor device and method of manufacturing same

• US 7,786,496 B2
• Filed: 04/23/2003
• Issued: 08/31/2010
• Est. Priority Date: 04/24/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuwabara, Hideaki, Seo, Satoshi, Yamazaki, Shunpei
• Primary Examiner(s): Trinh; Hoa B
• Application Number:
  US10/421,238
• Publication Number:
  US 20030201447A1
• Time in Patent Office: 2,687 Days
• Field of Search: 257/40, 257/66, 257/88, 257/93, 257/103, 257/79, 257/290, 257/217, 257/294, 257/94, 257/96, 257/59, 257/72, 257 97- 99, 257/219, 257/E51.01, 257/E51.011, 257/E27.1, 257/E29.333, 315/169.3
• US Class Current: 257/98
• CPC Class Codes: G01J 1/4228 arrangements with two or more detectors, e.g. for sensitivity compensation
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/30 Devices specially adapted for multicolour light emission
• CPC Class Codes: H10K 59/35 : comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/38 : comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/10 : Substrates, e.g. flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

Claims

1. A semiconductor device comprising:

a field effect transistor with a channel forming region in a semiconductor substrate;

a light emitting element comprising a first electrode electrically connected to the field effect transistor, a layer containing an organic chemical compound on the first electrode, and a second electrode on the layer; and

an insulator covering an end portion of the first electrode,

wherein the first electrode has an inclined surface which is configured to reflect light emitted from the layer containing the organic chemical compound,

wherein the inclined surface contacts with the layer containing the organic chemical compound,

wherein an end portion of the insulator is located over the end portion of the first electrode.

2. The semiconductor device according to claim 1, wherein the second electrode comprises a conductive film permitting permeation of light.

3. The semiconductor device according to claim 1, wherein the first electrode is concave-shaped and formed in self-alignment with the insulator as a mask.

4. The semiconductor device according to claim 1, wherein the first electrode is an anode and the second electrode is a cathode.

5. The semiconductor device according to claim 1, wherein the first electrode is a cathode and the second electrode is an anode.

6. The semiconductor device according to claim 1, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

7. The semiconductor device according to claim 1, wherein the first electrode is made of a different material from that of a drain electrode or a source electrode of the field effect transistor.

8. The semiconductor device according to claim 1, wherein an inclination angle of the inclined surface is more than 30°

but less than 70°

.

9. The semiconductor device according to claim 1, wherein the insulator covering the end portion of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 3 μ

m.

10. The semiconductor device according to claim 1, wherein the layer containing the organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

11. The semiconductor device according to claim 1, wherein the layer containing the organic chemical compound is made of a white light emitting material, and combines with a color filter.

12. The semiconductor device according to claim 1, wherein the layer containing the organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer.

13. The semiconductor device according to claim 1, wherein the field effect transistor is a MISFET, or a MOSFET.

14. The semiconductor device according to of claim 1, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

15. The semiconductor device according to claim 1, the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a DVD player, an electronic game equipment, and a portable information terminal.

16. A semiconductor device comprising a luminescent element comprising:

a field effect transistor with a channel forming region in a semiconductor substrate;

a light emitting element comprising a first electrode electrically connected to the field effect transistor, a layer containing an organic chemical compound on the first electrode, and a second electrode on the layer; and

an insulator covering an end portion of the first electrode,

wherein a center portion of the first electrode is concave-shaped to have a thinner film thickness than that of the end portion, and

wherein the first electrode has an inclined surface which contacts with the layer containing the organic chemical compound,

wherein an end portion of the insulator is located over the end portion of the first electrode.

17. The semiconductor device according to claim 16, wherein the second electrode comprises a conductive film permitting permeation of light.

18. The semiconductor device according to claim 16, wherein the first electrode is concave-shaped and formed in self-alignment with the insulator as a mask.

19. The semiconductor device according to claim 16, wherein the first electrode is an anode and the second electrode is a cathode.

20. The semiconductor device according to claim 16, wherein the first electrode is a cathode and the second electrode is an anode.

21. The semiconductor device according to claim 16, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

22. The semiconductor device according to claim 16, wherein the first electrode is made of a different material from that of a drain electrode or a source electrode of the field effect transistor.

23. The semiconductor device according to claim 16, wherein the first electrode comprises an inclined surface directed toward a center thereof, and an inclination angle is more than 30°

but less than 70°

.

24. The semiconductor device according to claim 16, wherein the insulator covering the end portion of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 3 μ

m.

25. The semiconductor device according to claim 16, wherein the layer containing the organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

26. The semiconductor device according to claim 16, wherein the layer containing the organic chemical compound is made of a white light emitting material, and combines with a color filter.

27. The semiconductor device according to claim 16, wherein the layer containing the organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer.

28. The semiconductor device according to claim 16, wherein the field effect transistor is a MISFET, or a MOSFET.

29. The semiconductor device according to of claim 16, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

30. The semiconductor device according to claim 16, the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a DVD player, an electronic game equipment, and a portable information terminal.

31. A semiconductor device comprising a luminescent element comprising:

a field effect transistor with a channel forming region in a semiconductor substrate;

a light emitting element comprising a first electrode electrically connected to the field effect transistor, a layer containing an organic chemical compound on the first electrode, and a second electrode on the layer; and

an insulator covering an end portion of the first electrode,

wherein the first electrode has a multi-layer, and the number of the multi-layer at a center portion of the first electrode is less than that at the end portion, and

wherein the first electrode has an inclined surface which contacts with the layer containing the organic chemical compound,

wherein an end portion of the insulator is located over the end portion of the first electrode.

32. The semiconductor device according to claim 31, wherein the second electrode comprises a conductive film permitting permeation of light.

33. The semiconductor device according to claim 31, wherein the first electrode is concave-shaped and formed in self-alignment with the insulator as a mask.

34. The semiconductor device according to claim 31, wherein the first electrode is an anode and the second electrode is a cathode.

35. The semiconductor device according to claim 31, wherein the first electrode is a cathode and the second electrode is an anode.

36. The semiconductor device according to claim 31, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

37. The semiconductor device according to claim 31, wherein the first electrode is made of a different material from that of a drain electrode or a source electrode of the field effect transistor.

38. The semiconductor device according to claim 31, wherein the first electrode comprises an inclined surface directed toward a center thereof, and an inclination angle is more than 30°

but less than 70°

.

39. The semiconductor device according to claim 31, wherein the insulator covering the end portion of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 3 μ

m.

40. The semiconductor device according to claim 31, wherein the layer containing the organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

41. The semiconductor device according to claim 31, wherein the layer containing the organic chemical compound is made of a white light emitting material, and combines with a color filter.

42. The semiconductor device according to claim 31, wherein the layer containing the organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer.

43. The semiconductor device according to claim 31, wherein the field effect transistor is a MISFET, or a MOSFET.

44. The semiconductor device according to of claim 31, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

45. The semiconductor device according to claim 31, the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a DVD player, an electronic game equipment, Of and a portable information terminal.

46. A semiconductor device comprising:

a field effect transistor with a channel forming region in a semiconductor substrate;

a light emitting element comprising a first electrode electrically connected to the field effect transistor, a layer containing an organic chemical compound on the first electrode, and a second electrode on the layer; and

an insulator covering an end portion of the first electrode,

wherein the first electrode has a depression, and a bottom width of the depression is smaller than a top width of the depression, and

wherein the first electrode has an inclined surface which contacts with the layer containing the organic chemical compound,

wherein an end portion of the insulator is located over the end portion of the first electrode.

47. The semiconductor device according to claim 46, wherein the second electrode comprises a conductive film permitting permeation of light.

48. The semiconductor device according to claim 46, wherein the first electrode is concave-shaped and formed in self-alignment with the insulator as a mask.

49. The semiconductor device according to claim 46, wherein the first electrode is an anode and the second electrode is a cathode.

50. The semiconductor device according to claim 46, wherein the first electrode is a cathode and the second electrode is an anode.

51. The semiconductor device according to claim 46, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

52. The semiconductor device according to claim 46, wherein the first electrode is made of a different material from that of a drain electrode or a source electrode of the field effect transistor.

53. The semiconductor device according to claim 46, wherein the first electrode comprises an inclined surface directed toward a center thereof, and an inclination angle is more than 30°

but less than 70°

.

54. The semiconductor device according to claim 46, wherein the insulator covering the end portion of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 3 μ

m.

55. The semiconductor device according to claim 46, wherein the layer containing the organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

56. The semiconductor device according to claim 46, wherein the layer containing the organic chemical compound is made of a white light emitting material, and combines with a color filter.

57. The semiconductor device according to claim 46, wherein the layer containing the organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer.

58. The semiconductor device according to claim 46, wherein the field effect transistor is a MISFET, or a MOSFET.

59. The semiconductor device according to of claim 46, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

60. The semiconductor device according to claim 46, the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a DVD player, an electronic game equipment, and a portable information terminal.

61. A semiconductor device comprising:

a field effect transistor with a channel forming region in a semiconductor substrate;

a light emitting element comprising a first electrode electrically connected to the field effect transistor, a layer containing an organic chemical compound on the first electrode, and a second electrode on the layer; and

an insulator covering an end portion of the first electrode,

wherein the first electrode has an inclined surface which contacts with the layer containing the organic chemical compound and is configured to reflect light emitted from the layer containing the organic chemical compound, and

wherein the layer containing the organic chemical compound is formed over the insulator,

wherein an end portion of the insulator is located over the end portion of the first electrode.

62. The semiconductor device according to claim 61, wherein the second electrode comprises a conductive film permitting permeation of light.

63. The semiconductor device according to claim 61, wherein the first electrode is concave-shaped and formed in self-alignment with the insulator as a mask.

64. The semiconductor device according to claim 61, wherein the first electrode is an anode and the second electrode is a cathode.

65. The semiconductor device according to claim 61, wherein the first electrode is a cathode and the second electrode is an anode.

66. The semiconductor device according to claim 61, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

67. The semiconductor device according to claim 61, wherein the first electrode is made of a different material from that of a drain electrode or a source electrode of the field effect transistor.

68. The semiconductor device according to claim 61, wherein an inclination angle of the inclined surface is more than 30°

but less than 70°

.

69. The semiconductor device according to claim 61, wherein the insulator covering the end portion of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 3 μ

m.

70. The semiconductor device according to claim 61, wherein the layer containing the organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

71. The semiconductor device according to claim 61, wherein the layer containing the organic chemical compound is made of a white light emitting material, and combines with a color filter.

72. The semiconductor device according to claim 61, wherein the layer containing the organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer.

73. The semiconductor device according to claim 61, wherein the field effect transistor is a MISFET, or a MOSFET.

74. The semiconductor device according to of claim 61, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

75. The semiconductor device according to claim 61, the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a DVD player, an electronic game equipment, and a portable information terminal.