Dense non-volatile memory array and method of fabrication
First Claim
Patent Images
1. A non-volatile memory array comprising:
- word lines; and
bit lines generally perpendicular to said word lines, wherein;
(a) a pitch between two neighboring word lines is less than 2 F, (b) said pitch is a word line width and a word line spacing, and (c) a minimum spacing is electrically limited to the point at which a dielectric between neighboring word lines breaks down.
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Abstract
A non-volatile memory array includes a multiplicity of memory cells, each of whose area is less than 4 F2 per cell (where F is a minimum feature size), and periphery elements to control the memory cells. The present invention also includes a non-volatile memory array which includes word lines and bit lines generally perpendicular to the word lines, with a word line pitch of less than 2 F. In one embodiment, the word lines are made of polysilicon spacers.
595 Citations
20 Claims
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1. A non-volatile memory array comprising:
- word lines; and
bit lines generally perpendicular to said word lines, wherein;
(a) a pitch between two neighboring word lines is less than 2 F, (b) said pitch is a word line width and a word line spacing, and (c) a minimum spacing is electrically limited to the point at which a dielectric between neighboring word lines breaks down. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10)
- word lines; and
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9. A non-volatile memory chip comprising:
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(a) an array of memory cells each of whose area is less than 4 F2 per cell, wherein F is a minimum feature size; (b) wherein said array also comprises word lines and bit lines generally perpendicular to said word lines such that a pitch between two neighboring word lines is less than 2 F, said pitch is a word line width and a word line spacing, and a minimum spacing is electrically limited to the point at which a dielectric between neighboring word lines breaks down; and (c) periphery elements to control said memory cells. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A non-volatile memory array comprising:
- polysilicon spacer word lines; and
bit lines generally perpendicular to said word lines, wherein;
(a) a pitch between two neighboring word lines is less than 2 F, (b) said pitch is a word line width and a word line spacing, and (c) a minimum spacing is electrically limited to the point at which a dielectric between neighboring word lines breaks down. - View Dependent Claims (17, 18, 19, 20)
- polysilicon spacer word lines; and
Specification