Semiconductor power device having a stacked discrete inductor structure

• US 7,786,837 B2
• Filed: 06/12/2007
• Issued: 08/31/2010
• Est. Priority Date: 06/12/2007
• Status: Active Grant

• Current Assignee: Alpha & Omega Semiconductor, Ltd.
• Original Assignee: Alpha & Omega Semiconductor, Ltd.
• Inventors: Hébert, François
• Primary Examiner(s): Enad; Elvin G
• Assistant Examiner(s): LIAN, MANGTIN B.
• Application Number:
  US11/818,219
• Publication Number:
  US 20080309442A1
• Time in Patent Office: 1,176 Days
• Field of Search: None
• US Class Current: 336/200
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 17/045 with core of cylindric geometry and coil wound along its longitudinal axis, i.e. rod or drum core
• CPC Class Codes: H01F 2007/1822 using a capacitor to produce a boost voltage
• CPC Class Codes: H01F 27/292 Surface mounted devices
• CPC Class Codes: H01F 27/40 Structural association with built-in electric component, e.g. fuse
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48799 Principal constituent of the connecting portion of the wire connector being Copper (Cu)
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10162 : with a square active surface
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15173 : in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/15174 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.

Claims

1. A semiconductor power device comprising:

a discrete inductor having contacts formed on a first surface of the discrete inductor;

at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts, wherein the discrete inductor further comprises second contacts formed on a second surface opposite the first surface and routing connections connecting the contacts on the first surface to corresponding ones of the second contacts, wherein the routing connections are formed on a surface of the discrete inductor and wrap around a periphery of the discrete inductor, and the contacts, the second contacts, and the routing connections are formed as an electroplated layer on the discrete inductor; and

an encapsulant covering the at least one semiconductor component and the first surface contacts.

2. The semiconductor power device of claim 1, wherein the routing connections comprise through vias.

3. The semiconductor power device of claim 1, wherein the contacts and the routing connections comprise AgNiSn.

4. The semiconductor power device of claim 1, wherein the device is a boost power converter and the at least one semiconductor component includes a Schottky diode and a control circuitry.

5. The semiconductor power device of claim 4, wherein the Schottky diode and the control circuitry are flip chip mounted to the contacts.

6. The semiconductor power device of claim 4, wherein the Schottky diode and the control circuitry are wire bonded to the contacts.

7. The semiconductor power device of claim 1, wherein the device is a buck power converter and the at least one semiconductor component includes a power integrated circuit.

8. The semiconductor power device of claim 7, wherein the power integrated circuit is flip chip mounted to the contacts.

9. The semiconductor power device of claim 7, wherein the power integrated circuit is wire bonded to the contacts.

10. The semiconductor power device of claim 1, wherein the discrete inductor comprises a surface mount wire-wound discrete inductor.

11. The semiconductor power device of claim 1, wherein the discrete inductor comprises a multi-layer discrete inductor.

12. The semiconductor power device of claim 1, further comprising a patterned contact formed on the first surface of the discrete inductor connecting a first contact to a second contact on the first surface.

13. The semiconductor power device of claim 12, further comprising a small solder ball connecting the first contact to the semiconductor component and a large solder ball connected to the second contact, the large solder ball substantially coplanar to a surface of the semiconductor component.

14. The semiconductor power device of claim 13, wherein the surface of the semiconductor component coplanar to the large is exposed and mounts to a printed circuit board.

15. The semiconductor power device of claim 12, wherein the discrete inductor further comprises contacts formed on a second surface opposite the first surface and routing connections connect the first surface contacts to corresponding second surface contacts.

16. The semiconductor power device of claim 15, wherein the routing connections are formed on a surface of the discrete inductor and wrap around a periphery of the discrete inductor.

17. The semiconductor power device of claim 15, wherein the device is a boost power converter and the at least one semiconductor component includes a Schottky diode and a control circuitry.

18. The semiconductor power device of claim 17, wherein the Schottky diode and the control circuitry are flip chip mounted to the contacts.

19. The semiconductor power device of claim 17, wherein the Schottky diode and the control circuitry are wire bonded to the contacts.

20. The semiconductor power device of claim 15, wherein the device is a buck power converter and the at least one semiconductor component includes a power integrated circuit.

21. The semiconductor power device of claim 20, wherein the power integrated circuit is flip chip mounted to the contacts.

22. The semiconductor power device of claim 20, wherein the power integrated circuit is wire bonded to the contacts.

23. The semiconductor power device of claim 12, wherein the discrete inductor comprises a surface mount wire-wound discrete inductor.

24. The semiconductor power device of claim 12, wherein the discrete inductor comprises a multi-layer discrete inductor.

25. The semiconductor power device of claim 12, further comprising an encapsulant covering the at least one semiconductor component and the first surface contacts.

26. A discrete inductor comprising:

contacts formed on a first surface of the discrete inductor, the contacts including a ball grid array for flip chip connecting to at least one semiconductor integrated circuit;

second contacts formed on a second surface of the discrete inductor opposite the first surface, and routing connections connecting the contacts on the first surface to corresponding ones of the second contacts, wherein the routing connections are formed on a surface of the discrete inductor and wrap around a periphery of the discrete inductor, and the contacts, the second contacts, and the routing connections are formed as an electroplated layer on the discrete inductor; and

an encapsulant covering the at least one semiconductor integrated circuit and the contacts.