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Integrated circuit embedded with non-volatile multiple-time programmable memory having variable coupling

  • US 7,787,295 B2
  • Filed: 11/14/2008
  • Issued: 08/31/2010
  • Est. Priority Date: 11/14/2007
  • Status: Expired due to Fees
First Claim
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1. A programmable multi-state non-volatile device situated on a substrate comprising:

  • a floating gate;

    wherein said floating gate is comprised of a material that is also used as a gate for a transistor device also situated on the substrate and associated with a logic gate and/or a volatile memory;

    a source region; and

    a drain region; and

    an n-channel coupling said source region and said drain region;

    wherein the drain region overlaps a sufficient portion of said gate such that a programming voltage for the device applied to said drain can be imparted to said floating gate through areal capacitive coupling;

    further wherein the device is adapted so that more than one bit of information can be stored by said programming voltage.

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