Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof
First Claim
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1. A method of reading a flash memory device, comprising:
- (a) driving a selected word line by applying a selection voltage thereto, and driving unselected word lines and first and second selection lines by applying a second voltage thereto;
(b) driving the second selection line by applying a ground voltage thereto;
(c) driving the second selection line by applying the second voltage thereto; and
(d) reading data from a memory cell that is coupled to the selected word line.
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Abstract
A method of reading a flash memory device can include driving a selected word line by applying a selection voltage thereto and driving unselected word lines by applying a first voltage thereto, driving the unselected word lines and first and second selection lines by applying a second voltage that is higher than the first voltage thereto, and reading data from a memory cell that is coupled to the selected word line.
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6 Claims
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1. A method of reading a flash memory device, comprising:
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(a) driving a selected word line by applying a selection voltage thereto, and driving unselected word lines and first and second selection lines by applying a second voltage thereto; (b) driving the second selection line by applying a ground voltage thereto; (c) driving the second selection line by applying the second voltage thereto; and (d) reading data from a memory cell that is coupled to the selected word line. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification