Lithography verification using guard bands

• US 7,788,627 B2
• Filed: 10/03/2006
• Issued: 08/31/2010
• Est. Priority Date: 10/03/2005
• Status: Active Grant

• Current Assignee: Synopsys Incorporated
• Original Assignee: Luminescent Technologies, Inc. (KLA Corporation)
• Inventors: Ashton, Christopher James, Abrams, Daniel S.
• Primary Examiner(s): Chiang; Jack
• Assistant Examiner(s): Tat; Binh C
• Application Number:
  US11/538,290
• Publication Number:
  US 20070184369A1
• Time in Patent Office: 1,428 Days
• Field of Search: 716 19- 21, 430/5, 430/22, 430/30
• US Class Current: 716/52
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

A method for verifying a lithographic process is described. During the method, a set of guard bands are defined around a target pattern that is to be printed on a semiconductor die using a photo-mask in the lithographic process. An estimated pattern is calculated using a model of the lithographic process. This model of the lithographic process includes a mask pattern corresponding to the photo-mask and a model of an optical path. Then, whether or not positions of differences between the estimated pattern and the target pattern exceeded one or more guard bands in the set of guard bands is determined.

Claims

1. A computer-implemented method for verifying a lithographic process, comprising:

defining a set of guard bands around a target pattern, wherein the target pattern is to be printed on a semiconductor die using a photo-mask in the lithographic process;

using a processor to calculate an estimated pattern using a model of the lithographic process, wherein the model of the lithographic process includes a mask pattern corresponding to the photo-mask and a model of an optical path, wherein an inverse optical calculation was used to determine the mask pattern at an object plane in the optical path based at least in part on the target pattern at an image plane in the optical path and the model of the optical path, and wherein the model of the optical path includes information in addition to a magnification of the optical path; and

determining if positions of differences between the estimated pattern and the target pattern exceeded one or more guard bands in the set of guard bands.

2. The method of claim 1, wherein the model of the lithographic process includes a photo-resist model.

3. The method of claim 1, wherein the set of guard bands correspond to tolerances associated with the target pattern.

4. The method of claim 1, wherein different regions in the target pattern have different guard bands in the set of guard bands.

5. The method of claim 4, wherein the different regions include corners, straight portions, angular portions, rectangular end portions, and transitional regions between any two respective regions.

6. The method of claim 4, wherein regions including corners in the target pattern have a larger guard band than regions including straight portions in the target pattern.

7. The method of claim 1, wherein at least some of the guard bands in the set of guard bands are defined in accordance with user criteria.

8. The method of claim 1, wherein at least some of the guard bands in the set of guard bands are defined in accordance with topology of one or more regions in the target pattern.

9. The method of claim 1, wherein the set of guard bands are associated with features in the target pattern.

10. The method of claim 9, wherein a respective guard band in the set of guard bands overlaps a corresponding feature.

11. The method of claim 9, wherein the features include edges.

12. The method of claim 1, wherein the set of guard bands, target pattern, and estimated pattern include bitmap images.

13. The method of claim 12, wherein the determining includes performing a logic operation on the estimated pattern and the target pattern.

14. The method of claim 13, wherein the logic operation includes an exclusive OR (XOR) operation.

15. The method of claim 1, wherein the set of guard bands, target pattern, and estimated pattern include grayscale images.

16. The method of claim 15, wherein the determining is performed at sub-pixel resolution.

17. The method of claim 1, wherein the calculating and determining are performed over a range of process conditions in the lithographic process.

18. The method of claim 1, further comprising asserting a remedial action condition in accordance with the determined positions.

19. A computer-program product for use in conjunction with a computer system, the computer-program product comprising a computer-readable storage medium and a computer-program mechanism embedded therein for verifying a lithographic process, the computer-program mechanism including:

instructions for defining a set of guard bands wound a target pattern, wherein the target pattern is to be printed on a semiconductor die using a photo-mask in the lithographic process;

instructions for calculating an estimated pattern using a model of the lithographic process, wherein the model, of the lithographic process includes a mask pattern corresponding to the photo-mask and a model of an optical path, wherein an inverse optical calculation was used to determine the mask pattern at an object plane in the optical path based at least in part on the target pattern at an image plane in the optical path and the model of the optical path, and wherein the model of the optical path includes information in addition to a magnification of the optical path; and

instructions for determining if positions of differences between the estimated pattern and the target pattern exceeded one or more guard bands in the set of guard bands.

20. A computer system, comprising:

at least one processor;

at least one memory; and

at least one program module, the program module stored in the memory and configured to be executed by the processor, wherein at least the program module is for verifying a lithographic process, at least the program module including;

instructions for defining a set of guard bands around a target pattern, wherein the target pattern is to be printed on a semiconductor die using a photo-mask in the lithographic process;

instructions for calculating an estimated pattern using a model of the lithographic process, wherein the model of the lithographic process includes a mask pattern corresponding to the photo-mask and a model of an optical path, wherein an inverse optical calculation was used to determine the mask pattern at an object plane in the optical path based at least in part on the target pattern at an image plane in the optical path and the model of the optical path, and wherein the model of the optical path includes information in addition to a magnification of the optical path; and

instructions for determining if positions of differences between the estimated pattern and the target pattern exceeded one or more guard bands in the set of guard bands.

21. A computer system, comprising:

means for computing;

means for storing; and

at least one program module mechanism, the program module mechanism stored in at least the means for storing and configured to be executed by at least the means for computing, wherein at least the program module mechanism is for verifying a lithographic process, at least the program module mechanism including;

instructions for defining a set of guard bands around a target pattern, wherein the target pattern is to be printed on a semiconductor die using a photo-mask in the lithographic process;

instructions for calculating an estimated pattern using a model of the lithographic process, wherein the model of the lithographic process includes a mask pattern corresponding to the photo-mask and a model of an optical path, wherein an inverse optical calculation was used to determine the mask pattern at an object plane in the optical path based at least in part on the target pattern at an image plane in the optical path and the model of the optical path, and wherein the model of the optical path includes information in addition to a magnification of the optical path; and

instructions for determining if positions of differences between the estimated pattern and the target pattern exceeded one or more guard bands in the set of guard bands.

22. A computer-implemented method for verifying a semiconductor-manufacturing process, comprising:

defining a set of guard bands around a target pattern, wherein the target pattern is to be printed on a semiconductor die using a write device in the semiconductor-manufacturing process;

using a processor to calculate an estimated pattern using a model of the semiconductor-manufacturing process, wherein the model of the semiconductor-manufacturing process includes a write pattern for the write device, wherein an inverse optical calculation was used to determine the write pattern at an object plane of the write device based at least in pad on the target pattern at an image plane in the write device and the model of the semiconductor-manufacturing process, and wherein the model of the optical path includes information in addition to a magnification of the optical path; and

determining if positions of differences between the estimated pattern and the target pattern exceeded one or more guard bands in the set of guard bands.