Methods and apparatus for cleaning chamber components

• US 7,789,969 B2
• Filed: 10/31/2007
• Issued: 09/07/2010
• Est. Priority Date: 11/01/2006
• Status: Active Grant

• Current Assignee: Quantum Global Technologies LLC (Ultra Clean Holdings Incorporated)
• Original Assignee: Applied Materials Incorporated
• Inventors: Chen, Ning, Tan, Samantha S. H., Echols, Thomas, Rabinovich, Felix, Maleski, Janet
• Primary Examiner(s): Cleveland; Michael
• Assistant Examiner(s): BLAN, NICOLE R
• Application Number:
  US11/931,272
• Publication Number:
  US 20080099054A1
• Time in Patent Office: 1,042 Days
• Field of Search: None
• US Class Current: 134/21
• CPC Class Codes: B08B 3/04 Cleaning involving contact with liquid
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: B08B 5/00 Cleaning by methods involving the use of air flow or gas flow B08B6/00 takes precedence
• CPC Class Codes: B08B 9/00 Cleaning hollow articles by methods or apparatus specially adapted thereto B08B6/00 takes precedence
• CPC Class Codes: B08B 9/02 Cleaning pipes or tubes or systems of pipes or tubes apparatus for cleaning metal pipes by chemical methods C23G3/04 ; removing obstructions in waste pipes or sinks E03C1/30; cleaning sewer pipes E03F9/00; cleaning boreholes or wells E21B37/00; cleaning furnace tubes, flues, chimneys F23J3/02; cleaning heat-transfer conduits, e.g. water tubes of boilers F28G
• CPC Class Codes: C23C 16/4407 Cleaning of reactor or reactor parts by using wet or mechanical methods

Abstract

In a first aspect, a method for cleaning a semiconductor fabrication chamber component having an orifice is provided. The method includes (A) placing the component into a bath having a cleaning solution; (B) flowing a fluid into the orifice thereby maintaining at least a first portion of the orifice free from cleaning solution while the cleaning solution cleans the component; and (C) withdrawing the fluid from the orifice such that cleaning solution enters into the first portion of the orifice and cleans the first portion of the orifice. Numerous other aspects are also provided.

Claims

1. A method of cleaning a semiconductor fabrication chamber component having an orifice comprising:

placing the component into a bath having a cleaning solution;

injecting a fluid into the orifice thereby maintaining at least a first portion of the orifice free from cleaning solution while the cleaning solution cleans the component;

controlling the amount of time the orifice is in contact with the cleaning solution; and

withdrawing the fluid from the orifice such that cleaning solution enters into the first portion of the orifice and cleans the first portion of the orifice;

wherein withdrawing the fluid from the orifice comprises applying a vacuum to the orifice.

2. The method of claim 1, wherein the component is a gas distribution element.

3. The method of claim 2, wherein the component is a face plate used in a deposition chamber.

4. The method of claim 1, wherein the cleaning solution comprises:

hydrofluoric acid (HF); and

nitric acid (HNO₃).

5. The method of claim 4, wherein the cleaning solution comprises about 10% hydrofluoric acid and about 90% nitric acid.

6. The method of claim 4, wherein the cleaning solution comprises about 15% hydrofluoric acid and about 85% nitric acid.

7. The method of claim 4, wherein the cleaning solution comprises about 5% hydrofluoric acid and about 95% nitric acid.

8. The method of claim 1, wherein the fluid is nitrogen gas.

9. The method of claim 1, wherein the fluid is an inert gas.

10. The method of claim 1, further comprising:

flowing the fluid into the orifice after the fluid is withdrawn from the orifice; and

withdrawing the fluid from the orifice a second time.

11. The method of claim 1, wherein flowing the fluid into the orifice comprises:

coupling a jig to the component; and

flowing the fluid through the jig and into the orifice.

12. The method of claim 11, wherein the jig forms a fluid tight seal with the component.

13. A method of cleaning a semiconductor fabrication chamber component having an orifice comprising:

placing the component into a bath having a cleaning solution;

injecting a fluid into the orifice thereby maintaining at least a first portion of the orifice free from cleaning solution while the cleaning solution cleans a second portion of the orifice;

controlling the amount of time the orifice is in contact with the cleaning solution; and

withdrawing the fluid from the orifice such that cleaning solution enters into the first portion of the orifice and cleans the first portion of the orifice;

wherein withdrawing the fluid from the orifice comprises applying a vacuum to the orifice.

14. The method of claim 13, wherein the component is a gas distribution element.

15. The method of claim 14, wherein the component is a face plate used in a deposition chamber.

16. The method of claim 13, wherein the cleaning solution comprises:

hydrofluoric acid (HF); and

nitric acid (HNO₃).

17. The method of claim 13, wherein flowing the fluid into the orifice comprises:

coupling a jig to the component; and

flowing the fluid through the jig and into the orifice.