Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures
First Claim
1. A method of fabricating a device structure for a non-volatile random access memory from a semiconductor layer carried on an insulating layer, the method comprising:
- forming first, second, and third semiconductor bodies from the semiconductor layer and with a juxtaposed relationship in which the second semiconductor body is disposed between the first and third semiconductor bodies;
doping the first semiconductor body to form a source and a drain;
forming a first dielectric layer between the first semiconductor body and the second semiconductor body;
forming a second dielectric layer between the second semiconductor body and the third semiconductor body;
after the first and second dielectric layers are formed, masking a first portion of the second semiconductor body and a first portion of the third semiconductor body; and
after the first portion of the second semiconductor body and the first portion of the third semiconductor body are masked, concurrently removing a second portion of the second semiconductor body and a second portion of the third semiconductor body with a selective etching process,wherein the second semiconductor body and the third semiconductor body respectively define a floating gate electrode and a control gate electrode that cooperate to control carrier flow in a channel in the first semiconductor body between the source and the drain.
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Abstract
Device and design structures for memory cells in a non-volatile random access memory (NVRAM) and methods for fabricating such device structures using complementary metal-oxide-semiconductor (CMOS) processes. The device structure, which is formed using a semiconductor-on-insulator (SOI) substrate, includes a floating gate electrode, a semiconductor body, and a control gate electrode separated from the semiconductor body by the floating gate electrode. The floating gate electrode, the control gate electrode, and the semiconductor body, which are both formed from the monocrystalline SOI layer of the SOI substrate, are respectively separated by dielectric layers. The dielectric layers may each be composed of thermal oxide layers grown on confronting sidewalls of the semiconductor body, the floating gate electrode, and the control gate electrode. An optional deposited dielectric material may fill any remaining gap between either pair of the thermal oxide layers.
245 Citations
16 Claims
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1. A method of fabricating a device structure for a non-volatile random access memory from a semiconductor layer carried on an insulating layer, the method comprising:
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forming first, second, and third semiconductor bodies from the semiconductor layer and with a juxtaposed relationship in which the second semiconductor body is disposed between the first and third semiconductor bodies; doping the first semiconductor body to form a source and a drain; forming a first dielectric layer between the first semiconductor body and the second semiconductor body; forming a second dielectric layer between the second semiconductor body and the third semiconductor body; after the first and second dielectric layers are formed, masking a first portion of the second semiconductor body and a first portion of the third semiconductor body; and after the first portion of the second semiconductor body and the first portion of the third semiconductor body are masked, concurrently removing a second portion of the second semiconductor body and a second portion of the third semiconductor body with a selective etching process, wherein the second semiconductor body and the third semiconductor body respectively define a floating gate electrode and a control gate electrode that cooperate to control carrier flow in a channel in the first semiconductor body between the source and the drain. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification